Steady-state and transient electron transport within the III–V nitride semiconductors, GaN, AlN, and InN: a review
SK O'leary, BE Foutz, MS Shur, LF Eastman - Journal of Materials Science …, 2006 - Springer
The III–V nitride semiconductors, gallium nitride, aluminum nitride, and indium nitride, have,
for some time now, been recognized as promising materials for novel electronic and …
for some time now, been recognized as promising materials for novel electronic and …
[HTML][HTML] Advances in hydrogen, carbon dioxide, and hydrocarbon gas sensor technology using GaN and ZnO-based devices
In this paper, we review our recent results in developing gas sensors for hydrogen using
various device structures, including ZnO nanowires and GaN High Electron Mobility …
various device structures, including ZnO nanowires and GaN High Electron Mobility …
Control of threshold voltage of AlGaN/GaN HEMTs by fluoride-based plasma treatment: From depletion mode to enhancement mode
This paper presents a method with an accurate control of threshold voltages (V th) of
AlGaN/GaN high-electron mobility transistors (HEMTs) using a fluoride-based plasma …
AlGaN/GaN high-electron mobility transistors (HEMTs) using a fluoride-based plasma …
2-D analytical model for current–voltage characteristics and transconductance of AlGaN/GaN MODFETs
M Li, Y Wang - IEEE Transactions on Electron Devices, 2007 - ieeexplore.ieee.org
A threshold-voltage-based 2-D analytical model for the current-voltage characteristics of the
AlGaN/GaN modulation-doped field-effect transistors (MODFETs) is presented. In this paper …
AlGaN/GaN modulation-doped field-effect transistors (MODFETs) is presented. In this paper …
Electrical properties, microstructure, and thermal stability of Ta-based ohmic contacts annealed at low temperature for GaN HEMTs
A Malmros, H Blanck, N Rorsman - Semiconductor science and …, 2011 - iopscience.iop.org
Ta-based ohmic contacts to gallium nitride high electron mobility transistor (GaN HEMT)
epitaxial structures were investigated. Two metallization schemes were considered: Ta/Al/Ni …
epitaxial structures were investigated. Two metallization schemes were considered: Ta/Al/Ni …
Device linearity and intermodulation distortion comparison of dual material gate and conventional AlGaN/GaN high electron mobility transistor
In the work proposed, linearity performance of dual material gate (DMG) AlGaN/GaN HEMT
has been analyzed and compared with the corresponding performance of Single Material …
has been analyzed and compared with the corresponding performance of Single Material …
The influence of high-k passivation layer on breakdown voltage of Schottky AlGaN/GaN HEMTs
In this work, analysis and optimization of different high-k material in the passivation layer is
carried out to improve the breakdown voltage in a Schottky based AlGaN/GaN High Electron …
carried out to improve the breakdown voltage in a Schottky based AlGaN/GaN High Electron …
Microwave noise characteristics of AlGaN/GaN HEMTs on SiC substrates for broad-band low-noise amplifiers
JW Lee, A Kuliev, V Kumar, R Schwindt… - IEEE Microwave and …, 2004 - ieeexplore.ieee.org
This letter reports high-performance passivated AlGaN/GaN high electron-mobility
transistors (HEMTs) with 0.25-μm gate-length for low noise applications. The devices …
transistors (HEMTs) with 0.25-μm gate-length for low noise applications. The devices …
Steady-state and transient electron transport within the wide energy gap compound semiconductors gallium nitride and zinc oxide: an updated and critical review
The wide energy gap compound semiconductors, gallium nitride and zinc oxide, are widely
recognized as promising materials for novel electronic and optoelectronic device …
recognized as promising materials for novel electronic and optoelectronic device …
Unique model of polarization engineered AlGaN/GaN based HEMTs for high power applications
In this paper, a novel source/drain Schottky contact technology AlGaN/GaN HEMT device is
designed and modelled. Based on this concept, effect of mole fraction in three different …
designed and modelled. Based on this concept, effect of mole fraction in three different …