Comparison of Razavy and Pöschl-Teller confined potentials on the opto-electronic properties in a ZnSe/CdSe/ZnSe quantum well
M Kavitha, A Naifar, AJ Peter, V Raja - Optical and Quantum Electronics, 2024 - Springer
Electronic and optical properties of an exciton in the ZnSe/CdSe/ZnSe quantum well are
investigated using the Razavy and Pöschl-Teller confined potentials. The theoretical …
investigated using the Razavy and Pöschl-Teller confined potentials. The theoretical …
Efficiency of InN/InGaN/GaN Intermediate-Band Solar Cell under the Effects of Hydrostatic Pressure, In-Compositions, Built-in-Electric Field, Confinement, and …
H Abboudi, H El Ghazi, R En-Nadir… - Nanomaterials, 2024 - mdpi.com
This paper presents a thorough numerical investigation focused on optimizing the efficiency
of quantum-well intermediate-band solar cells (QW-IBSCs) based on III-nitride materials …
of quantum-well intermediate-band solar cells (QW-IBSCs) based on III-nitride materials …
Electronic Properties of Ultrathin InGaN/GaN Heterostructures under the Influences of Laser and Electric Fields: Investigation of the Harmonic and Inharmonic …
R En-nadir, H El Ghazi, MABM Kabatas, M Tihtih… - Physica E: Low …, 2024 - Elsevier
Defects and impurities within semiconductor materials pose significant challenges. This
investigation scrutinizes the response of a single dopant donor impurity located in …
investigation scrutinizes the response of a single dopant donor impurity located in …
Numerical Analysis of InGaN/GaN Intermediate Band Solar Cells Under X-sun Concentration, In-compositions, and Doping: Unlocking the Potential of Concentrated …
HE Ghazi, YE Ramazan, R En-nadir - Arabian Journal for Science and …, 2024 - Springer
Our research focuses on advancing solar energy through the study of nano-and
microelectronic structures. Using the finite element method, we analyze key characteristics …
microelectronic structures. Using the finite element method, we analyze key characteristics …