Spintronics: a spin-based electronics vision for the future

SA Wolf, DD Awschalom, RA Buhrman, JM Daughton… - science, 2001 - science.org
This review describes a new paradigm of electronics based on the spin degree of freedom of
the electron. Either adding the spin degree of freedom to conventional charge-based …

Spintronics: Fundamentals and applications

I Žutić, J Fabian, SD Sarma - Reviews of modern physics, 2004 - APS
Spintronics, or spin electronics, involves the study of active control and manipulation of spin
degrees of freedom in solid-state systems. This article reviews the current status of this …

Prospects of spintronics based on 2D materials

YP Feng, L Shen, M Yang, A Wang… - Wiley …, 2017 - Wiley Online Library
Spintronics holds the promise for future information technologies. Devices based on
manipulation of spin are most likely to replace the current silicon complementary metal …

Injection and detection of a spin-polarized current in a light-emitting diode

R Fiederling, M Keim, G Reuscher, W Ossau… - Nature, 1999 - nature.com
The field of magnetoelectronics has been growing in practical importance in recent years.
For example, devices that harness electronic spin—such as giant-magnetoresistive sensors …

Theory of electrical spin injection: Tunnel contacts as a solution of the conductivity mismatch problem

EI Rashba - Physical Review B, 2000 - APS
Abstract Theory of electrical spin injection from a ferromagnetic (FM) metal into a normal (N)
conductor is presented. We show that tunnel contacts (T) can dramatically increase spin …

Wide band gap ferromagnetic semiconductors and oxides

SJ Pearton, CR Abernathy, ME Overberg… - Journal of Applied …, 2003 - pubs.aip.org
Recent advances in the theory and experimental realization of ferromagnetic
semiconductors give hope that a new generation of microelectronic devices based on the …

[图书][B] Handbook of nanoscience, engineering, and technology

WA Goddard III, D Brenner, SE Lyshevski, GJ Iafrate - 2002 - taylorfrancis.com
Nanotechnology, science, and engineering spearhead the 21st century revolution that is
leading to fundamental breakthroughs in the way materials, devices, and systems are …

Room-temperature spin injection from Fe into GaAs

HJ Zhu, M Ramsteiner, H Kostial, M Wassermeier… - Physical Review Letters, 2001 - APS
Injection of spin polarized electrons from a metal into a semiconductor is demonstrated for a
GaAs/(In, Ga) As light emitting diode covered with Fe. The circular polarization degree of the …

Efficient electrical spin injection from a magnetic metal/tunnel barrier contact into a semiconductor

AT Hanbicki, BT Jonker, G Itskos, G Kioseoglou… - Applied Physics …, 2002 - pubs.aip.org
We report electrical spin injection from a ferromagnetic metal contact into a semiconductor
light emitting diode structure with an injection efficiency of 30% which persists to room …

Nonlinear spin Hall effect in -symmetric collinear magnets

S Hayami, M Yatsushiro, H Kusunose - Physical Review B, 2022 - APS
We theoretically investigate a nonlinear spin Hall effect in PT-symmetric antiferromagnetic
metals, which serve as an efficient spin current generator. We elucidate that an emergent …