Spintronics: a spin-based electronics vision for the future
SA Wolf, DD Awschalom, RA Buhrman, JM Daughton… - science, 2001 - science.org
This review describes a new paradigm of electronics based on the spin degree of freedom of
the electron. Either adding the spin degree of freedom to conventional charge-based …
the electron. Either adding the spin degree of freedom to conventional charge-based …
Spintronics: Fundamentals and applications
Spintronics, or spin electronics, involves the study of active control and manipulation of spin
degrees of freedom in solid-state systems. This article reviews the current status of this …
degrees of freedom in solid-state systems. This article reviews the current status of this …
Prospects of spintronics based on 2D materials
Spintronics holds the promise for future information technologies. Devices based on
manipulation of spin are most likely to replace the current silicon complementary metal …
manipulation of spin are most likely to replace the current silicon complementary metal …
Injection and detection of a spin-polarized current in a light-emitting diode
R Fiederling, M Keim, G Reuscher, W Ossau… - Nature, 1999 - nature.com
The field of magnetoelectronics has been growing in practical importance in recent years.
For example, devices that harness electronic spin—such as giant-magnetoresistive sensors …
For example, devices that harness electronic spin—such as giant-magnetoresistive sensors …
Theory of electrical spin injection: Tunnel contacts as a solution of the conductivity mismatch problem
EI Rashba - Physical Review B, 2000 - APS
Abstract Theory of electrical spin injection from a ferromagnetic (FM) metal into a normal (N)
conductor is presented. We show that tunnel contacts (T) can dramatically increase spin …
conductor is presented. We show that tunnel contacts (T) can dramatically increase spin …
Wide band gap ferromagnetic semiconductors and oxides
SJ Pearton, CR Abernathy, ME Overberg… - Journal of Applied …, 2003 - pubs.aip.org
Recent advances in the theory and experimental realization of ferromagnetic
semiconductors give hope that a new generation of microelectronic devices based on the …
semiconductors give hope that a new generation of microelectronic devices based on the …
[图书][B] Handbook of nanoscience, engineering, and technology
Nanotechnology, science, and engineering spearhead the 21st century revolution that is
leading to fundamental breakthroughs in the way materials, devices, and systems are …
leading to fundamental breakthroughs in the way materials, devices, and systems are …
Room-temperature spin injection from Fe into GaAs
HJ Zhu, M Ramsteiner, H Kostial, M Wassermeier… - Physical Review Letters, 2001 - APS
Injection of spin polarized electrons from a metal into a semiconductor is demonstrated for a
GaAs/(In, Ga) As light emitting diode covered with Fe. The circular polarization degree of the …
GaAs/(In, Ga) As light emitting diode covered with Fe. The circular polarization degree of the …
Efficient electrical spin injection from a magnetic metal/tunnel barrier contact into a semiconductor
We report electrical spin injection from a ferromagnetic metal contact into a semiconductor
light emitting diode structure with an injection efficiency of 30% which persists to room …
light emitting diode structure with an injection efficiency of 30% which persists to room …
Nonlinear spin Hall effect in -symmetric collinear magnets
S Hayami, M Yatsushiro, H Kusunose - Physical Review B, 2022 - APS
We theoretically investigate a nonlinear spin Hall effect in PT-symmetric antiferromagnetic
metals, which serve as an efficient spin current generator. We elucidate that an emergent …
metals, which serve as an efficient spin current generator. We elucidate that an emergent …