Standards for the characterization of endurance in resistive switching devices
Resistive switching (RS) devices are emerging electronic components that could have
applications in multiple types of integrated circuits, including electronic memories, true …
applications in multiple types of integrated circuits, including electronic memories, true …
[HTML][HTML] Resistance random access memory
Non-volatile memory (NVM) will play a decisive role in the development of the next-
generation of electronic products. Therefore, the development of next-generation NVM is …
generation of electronic products. Therefore, the development of next-generation NVM is …
Hybrid 2D–CMOS microchips for memristive applications
Exploiting the excellent electronic properties of two-dimensional (2D) materials to fabricate
advanced electronic circuits is a major goal for the semiconductor industry,. However, most …
advanced electronic circuits is a major goal for the semiconductor industry,. However, most …
Silicon Oxide (SiOx): A Promising Material for Resistance Switching?
Interest in resistance switching is currently growing apace. The promise of novel high‐
density, low‐power, high‐speed nonvolatile memory devices is appealing enough, but …
density, low‐power, high‐speed nonvolatile memory devices is appealing enough, but …
Physical and chemical mechanisms in oxide-based resistance random access memory
KC Chang, TC Chang, TM Tsai, R Zhang… - Nanoscale research …, 2015 - Springer
In this review, we provide an overview of our work in resistive switching mechanisms on
oxide-based resistance random access memory (RRAM) devices. Based on the …
oxide-based resistance random access memory (RRAM) devices. Based on the …
ZnO-based hybrid nanocomposite for high-performance resistive switching devices: Way to smart electronic synapses
Neuromorphic computing systems inspired by the human brain emulate biological synapses
electronically for information handling and processing. Recently, memristive switching …
electronically for information handling and processing. Recently, memristive switching …
Resistive switching and synaptic behaviors of an HfO2/Al2O3 stack on ITO for neuromorphic systems
This work reports on the bipolar resistive switching (RS) characteristics and possible
applicability to transparent synaptic devices when an ultrathin Al 2 O 3 interfacial layer is …
applicability to transparent synaptic devices when an ultrathin Al 2 O 3 interfacial layer is …
Structural changes and conductance thresholds in metal-free intrinsic SiOx resistive random access memory
We present an investigation of structural changes in silicon-rich silicon oxide metal-insulator-
metal resistive RAM devices. The observed unipolar switching, which is intrinsic to the bulk …
metal resistive RAM devices. The observed unipolar switching, which is intrinsic to the bulk …
A model for the set statistics of RRAM inspired in the percolation model of oxide breakdown
S Long, X Lian, C Cagli, L Perniola… - IEEE electron device …, 2013 - ieeexplore.ieee.org
The set voltage distribution of Pt/HfO 2/Pt resistive switching memory is shown to fit well a
Weibull model with Weibull slope and scale factor increasing logarithmically with the …
Weibull model with Weibull slope and scale factor increasing logarithmically with the …
[HTML][HTML] Intrinsic resistance switching in amorphous silicon oxide for high performance SiOx ReRAM devices
In this paper, we present a study of intrinsic bipolar resistance switching in metal-oxide-
metal silicon oxide ReRAM devices. Devices exhibit low electroforming voltages (typically …
metal silicon oxide ReRAM devices. Devices exhibit low electroforming voltages (typically …