Master fundamental technologies for modern semiconductor integrated circuits with this
definitive textbook. It includes an early introduction of a state-of-the-art CMOS process flow …

The formation of amorphous layers in GaAs during ion bombardment at elevated
temperatures, where dynamic annealing of radiation-induced defects is substantial, is …

Disorder was introduced into GaAs by implantation of Si+ 30 ions, using a very wide range
of ion doses, dose rates, and implant temperatures, and studied by Raman scattering (RS) …

The diffusion of implanted Be in liquid‐encapsulated Czochralski GaAs samples is modeled
using SUPREM‐IV. GS, a simulator for GaAs and Si processing technology. The ''plus …

Raman spectroscopy was used in a study of the lattice restoration in Si+ implanted GaAs.
Investigated samples differed in the type of primary damage induced by selected …

The evolution of implant damage in InGaAs is studied for electrically active Si+ and
isoelectronic P+ implants. Extrinsic loops formed by excess interstitials are shown to be less …

The diffusion of implanted beryllium in gallium arsenide at 100keV for doses of 1× 1013 and
1× 1014cm− 2 during post-implant RTA were studied and simulated at temperatures of 700 …

UNIVERSITY OF FLORIDA THESIS OR DISSERTATION FORMATTING TEMPLATE Page 1
DOPANT-DEFECT INTERACTIONS IN SI DOPED INGAAS By AARON GREGG LIND A …

Ion implantation of GaAs presents process requirements differing from standard silicon
processing. Different implant species having differing source requirements are commonly …

For implantation of silicon dopant into gallium arsenide, sheet resistance and damage
increase as the ion dose rate increases in the high-dose regime (> 5.0× 10 13 cm− 2). But, in …