A novel CNTFET based Schmitt-Trigger read decoupled 12T SRAM cell with high speed, low power, and high Ion/Ioff ratio

L Soni, N Pandey - AEU-International Journal of Electronics and …, 2023 - Elsevier
Many researchers are working to develop a static random access memory (SRAM) cell that
uses low power, has good stability, better I on/I off ratio and speed. This paper presents a …

Nanowire array-based MOSFET for future CMOS technology to attain the ultimate scaling limit

K Bhol, U Nanda - Silicon, 2022 - Springer
Silicon nanowire (SiNW) structures are the essential foundations of the next generation
highly efficient and lowcost electronic devices because of their specific chemical, optical …

Low power and high-performance associative memory design

R Lorenzo, SNS Vajhala… - 2022 2nd International …, 2022 - ieeexplore.ieee.org
Memory is an essential element of every VLSI circuit. This paper reviews Content
Addressable Memory (CAM) and its conventional architectures. A model of CAM is proposed …

Investigation of CNTFET based energy efficient fast SRAM cells for edge AI devices

Y Alekhya, U Nanda - Silicon, 2022 - Springer
A novel reduced power with enhanced speed (RPES) technique for Static Random Access
Memory (SRAM) topologies using Carbon Nano Tube Field Effect Transistors (CNTFETs) …

An offset cancellation technique for SRAM sense amplifier based on relation of the delay and offset

Y Zhao, J Wang, Z Tong, X Wu, C Peng, W Lu… - Microelectronics …, 2022 - Elsevier
Sense amplifiers (SA) are facing increasing offset problems and amplifying problems due to
mismatch of transistors and variations. This paper presents a structure that cancels the offset …

Influence of oxide thickness variation on analog and RF performances of SOI FinFET

D Tripathy, DP Acharya, PK Rout… - … Series: Electronics and …, 2022 - casopisi.junis.ni.ac.rs
This paper focuses on the impact of variation in the thickness of the oxide (SiO 2) layer on
the performance parameters of a FinFET analysed by varying the oxide layer thickness in …

A low power feedback cutting 8T SRAM cell for improved stability

AP Kumar, R Lorenzo, U Prajvalitha… - … Conference on Device …, 2023 - ieeexplore.ieee.org
This paper presents a feed-back cutting 8T (FC8T) SRAM for stability enhancement and to
mitigate the power consumption. The design specifications such as noise margin, power …

CNTFET-based Data Independent Power Efficient and Robust 8T SRAM Cell

A Yalla, U Nanda - ECS Journal of Solid State Science and …, 2023 - iopscience.iop.org
A new carbon nano-tube field-effect transistors (CNTFETs) based Power Efficient and
Robust 8T (PER-8T) SRAM cell is proposed to reduce sub-threshold leakage currents, data …

SRAM on-chip monitoring methodology for high yield and energy efficient memory operation at near threshold voltage

T Kim, K Jeong, J Choi, T Kim, K Choi - Integration, 2020 - Elsevier
Low power design by near-threshold voltage (NTV) operation is very attractive since it
affords to considerably mitigate the sharp increase of power dissipation. However, one key …

ECG Heartbeat Signal Classification and Detection of Cardiac Abnormalities using Deep Learning

AK Tiwary, PK Rout, D Tripathy… - 2023 1st International …, 2023 - ieeexplore.ieee.org
cardiovascular diseases (CVDs) are evolved as the general chronic diseases that create
major threats to the health of human beings. The ECG machine can be used to track the …