2009-09-15 Assigned to KYMA TECHNOLOGIES, INC. reassignment KYMA
TECHNOLOGIES, INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR …

A method for large-scale manufacturing of gallium nitride boules. Large-area single crystal
seed plates are suspended in a rack, placed in a large diameter autoclave or internally …

In a method for making a GaN article, an epitaxial nitride layer is deposited on a single-
crystal Substrate. A 3D nucle ation GaN layer is grown on the epitaxial nitride layer by HVPE …

(57) ABSTRACT A GaN crystal having up to about 5 mole percent of at least one of
aluminum, indium, and combinations thereof. The GaN crystal has at least one grain having …

In a method for producing a resonant cavity light emitting device, a seed gallium nitride
crystal (14) and a Source material (30) are arranged in a nitrogen-containing Super heated …

US8089097B2 - Homoepitaxial gallium-nitride-based electronic devices and method for
producing same - Google Patents US8089097B2 - Homoepitaxial gallium-nitride-based …

A method utilizes sputter transport techniques to produce arrays or layers of self-forming, self-
oriented columnar structures characterized as discrete, single-crystal Group III nitride posts …

Techniques for processing materials in supercritical fluids including processing in a capsule
disposed within a high-pressure apparatus enclosure are disclosed. The disclosed …

An apparatus and method for processing materials in supercritical fluids is disclosed. The
apparatus includes a capsule configured to contain a supercritical fluid, a high strength …

US7170095B2 - Semi-insulating GaN and method of making the same - Google Patents
US7170095B2 - Semi-insulating GaN and method of making the same - Google Patents …