Stability and effect of annealing on the optical properties of plasma-deposited Ta2O5 and Nb2O5 films

JP Masse, H Szymanowski, O Zabeida, A Amassian… - Thin Solid Films, 2006 - Elsevier
Tantalum and niobium oxide optical thin films were prepared at room temperature by plasma-
enhanced chemical vapor deposition using tantalum and niobium pentaethoxide (M …

Optical constants and band gap determination of Pb0. 95La0. 05Zr0. 54Ti0. 46O3 thin films using spectroscopic ellipsometry and UV–visible spectroscopy

V Batra, S Kotru, M Varagas, CV Ramana - Optical Materials, 2015 - Elsevier
We report the structural evolution and optical properties of lanthanum doped lead zirconate
titanate (PLZT) thin films prepared on Pt/TiO 2/SiO 2/Si substrates by chemical solution …

Magnetophotonic crystals: Experimental realization and applications

M Inoue, AV Baryshev, T Goto, SM Baek, S Mito… - … : From theory to …, 2013 - Springer
The most striking feature of photonic crystals, compared with homogeneous optical
materials, is the existence of photonic band gaps. The band gaps are responsible for …

Structural and electro-optic properties of Ba0. 7Sr0. 3TiO3 thin films grown on various substrates using pulsed laser deposition

DY Wang, J Wang, HLW Chan, CL Choy - Journal of applied physics, 2007 - pubs.aip.org
Epitaxial Ba 0.7 Sr 0.3 Ti O 3 (BST) thin films were deposited on various single crystal
substrates, including La Al O 3 (LAO)(001),(La Al O 3) 0.3 (Sr 2 Al Ta O 6) 0.35 (LSAT)(001) …

Enhanced ferroelectric polarization in epitaxial thin films due to low La doping

D Mukherjee, M Hordagoda, D Pesquera, D Ghosh… - Physical Review B, 2017 - APS
Enhanced polarization is reported in ferroelectric (P b 1− x L ax)(Z r 0.52 T i 0.48) O 3 (PLZT)
thin films at low La doping concentrations. Epitaxial PLZT thin films with varying La …

Solution-Processed Pb(Zr,Ti)O3 Thin Films with Strong Remnant Pockels Coefficient

E Picavet, K De Geest, E Lievens… - … Applied Materials & …, 2024 - ACS Publications
In contrast to the widely studied electrical properties of Pb (Zr, Ti) O3 thin films, which have
led to their applicability in various application areas such as thin film capacitors …

Effects of Mn doping on dielectric properties of ferroelectric relaxor PLZT ceramics

V Dimza, AI Popov, L Lāce, M Kundzins… - Current Applied …, 2017 - Elsevier
Abstract A series of PLZT (8/65/35) ceramics with different Mn 2 O 3 concentration (0.01, 0.1,
0.3, 1.0, and 3.0% by weight) have been synthesized to figure out its influence on their …

Latest designing principle on the microstructure and lattice-structure for high-energy-density antiferroelectric materials in fast discharging applications

Y Bao, X Dong, G Wang - ACS Applied Energy Materials, 2019 - ACS Publications
Antiferroelectric (AFE) materials are considered to have a potentially ultrahigh energy
density, which is a determinant for pulse capacitors used in the energy storage section of …

Annealing-induced changes in chemical bonding and surface characteristics of chemical solution deposited Pb0. 95La0. 05Zr0. 54Ti0. 46O3 thin films

V Batra, CV Ramana, S Kotru - Applied Surface Science, 2016 - Elsevier
We report the effect of post deposition annealing temperature (T a= 550 and 750° C) on the
surface morphology, chemical bonding and structural development of lanthanum doped …

Caractérisation optique et structurale des couches minces d'oxydes complexes pour applications photoniques

S Amara - 2018 - dspace.univ-setif.dz
Dans ce Travail, des structures monocouches ZnO (non dopé et dopé Al) et multicouches
(ZnO/Al/ZnO; ZnO dopé Al/Al/ZnO dopé Al) ont été élaborées avec succès sur des substrats …