Computing power based artificial intelligence will profoundly change the productivity and
production relations, and the integrated circuit industry begin to rely on three-dimensional …

In this paper, a two-step copper-copper direct bonding process in a non-vacuum
environment is reported. Time-dependent evolution of argon/nitrogen plasma-activated …

In this study, two-step argon/nitrogen plasma-activated aluminum surface for aluminum-
aluminum direct bonding is reported. Surfaces from the as-deposited and the argon/nitrogen …

In this work, we study multi-die to wafer bonding through plasma-activated Cu-Cu direct
bonding carried out at room temperature in cleanroom ambient conditions. During the pre …

Surface diffusion is considered the primary mechanism for low temperature sintering
properties of Cu nano-solders. However, how surface diffusion affects the sintering quality …

A thin layer of copper nitride is sputtered onto silicon wafers by applying nitrogen plasma
onto a copper target in a sputtering vacuum chamber. Some of the as-sputtered copper …

In this paper, an alternative copper-to-copper direct bonding method is investigated through
electric current-induced bonding, which is the enhancement method for forming copper-to …

In this paper, the bonding parameters of Ag paste are optimized for LED die attach. The Ag
paste is characterized for its shear strength, hermeticity and morphology. It is found that a …

High-throughput Ar/N 2 plasma-activated Cu-Cu direct bonding for die-die and die-wafer
bonding is demonstrated at room temperature in ambient conditions. Before bonding, the Cu …

In this work, the bonding conditions of different die-attach materials are optimized for LED
die to substrate bonding. The die-attach materials are characterized for their mechanical …