[HTML][HTML] Perspective: Toward efficient GaN-based red light emitting diodes using europium doping
While InGaN/GaN blue and green light-emitting diodes (LEDs) are commercially available,
the search for an efficient red LED based on GaN is ongoing. The realization of this LED is …
the search for an efficient red LED based on GaN is ongoing. The realization of this LED is …
Implantation damage formation in a-, c-and m-plane GaN
K Lorenz, E Wendler, A Redondo-Cubero, N Catarino… - Acta Materialia, 2017 - Elsevier
Epitaxial GaN layers with a-, c-and m-plane surface orientations were implanted with 300
keV Ar-ions at 15 K with fluences ranging from 2× 10 12 to 4× 10 16 at/cm 2. Damage build …
keV Ar-ions at 15 K with fluences ranging from 2× 10 12 to 4× 10 16 at/cm 2. Damage build …
Identification of the prime optical center in
We identify a dominant light-emitting center in ion-implanted GaN: Eu 3+ for which the lattice
damage has been completely healed, according to x-ray diffraction and Rutherford …
damage has been completely healed, according to x-ray diffraction and Rutherford …
[HTML][HTML] Extracting defect profiles in ion-implanted GaN from ion channeling
Ion implantation offers many advantages for material doping, namely a meticulous control
over various parameters such as implantation area, fluence, energy, etc. However, ion …
over various parameters such as implantation area, fluence, energy, etc. However, ion …
High pressure annealing of Europium implanted GaN
K Lorenz, SMC Miranda, E Alves… - … and Devices VII, 2012 - spiedigitallibrary.org
GaN epilayers were implanted with Eu to fluences of 1× 10 13 Eu/cm 2 and 1× 10 15 Eu/cm
2. Post-implant thermal annealing was performed in ultra-high nitrogen pressures at …
2. Post-implant thermal annealing was performed in ultra-high nitrogen pressures at …
Utilization of native oxygen in Eu (RE)-doped GaN for enabling device compatibility in optoelectronic applications
The detrimental influence of oxygen on the performance and reliability of V/III nitride based
devices is well known. However, the influence of oxygen on the nature of the incorporation …
devices is well known. However, the influence of oxygen on the nature of the incorporation …
A mechanism for damage formation in GaN during rare earth ion implantation at medium range energy and room temperature
P Ruterana, B Lacroix, K Lorenz - Journal of Applied Physics, 2011 - pubs.aip.org
A detailed investigation of the crystallographic damage has been carried out in GaN
following 300 keV rare earth ion implantation at room temperature by varying the fluence …
following 300 keV rare earth ion implantation at room temperature by varying the fluence …
Ion Implantation into Nonconventional GaN Structures
K Lorenz - Physics, 2022 - mdpi.com
Despite more than two decades of intensive research, ion implantation in group III nitrides is
still not established as a routine technique for doping and device processing. The main …
still not established as a routine technique for doping and device processing. The main …
Doping β-Ga2O3 with europium: influence of the implantation and annealing temperature
Abstract β-Ga 2 O 3 bulk single crystals were doped by ion implantation at temperatures
from room temperature to 1000 C, using a 300 keV Europium beam with a fluence of 1× 10 …
from room temperature to 1000 C, using a 300 keV Europium beam with a fluence of 1× 10 …
Mechanisms of Implantation Damage Formation in AlxGa1–xN Compounds
DN Faye, E Wendler, M Felizardo… - The Journal of …, 2016 - ACS Publications
Al x Ga1–x N alloys, covering the entire compositional range (0≤ x≤ 1), were implanted at
room temperature with 200 keV argon (Ar) ions to fluences ranging from 1× 1013 to 2× 1016 …
room temperature with 200 keV argon (Ar) ions to fluences ranging from 1× 1013 to 2× 1016 …