This paper deals with the analytical modelling of high-k stacked Gate-All-Around
Heterojunction Tunnel Field Effect Transistor (GAA-HJTFET) considering the depletion …

In this article, a three-dimensional model of Tri-gate Tunnel Filed effect transistors (TFET)
with different gate materials is proposed. Analysis and comparison of various structures such …

A new two-dimensional analytical model is proposed for the electrical attributes of a gate-all-
around heterojunction tunnel field-effect transistor, including the potential distribution, lateral …

This paper presents, the design architecture of the Heterojunction Surrounding Gate (HSG)
Tunnel Field Effect Transistor (TFET) employing Single Material (SM) gate and Dual Material …

This paper presents a novel threshold voltage model for triple material gate-all-around TFET
based on its surface potential that also includes the device depletion regimes. Analytical …

This paper describes the design structure of the nanowire tunnel field effect transistor (NW-
TFET). The device simulation carried on nanohub device simulation tool. The parameters …

In this paper a new analytical modeling of Conical Gate-All-Around Tunnel Field Effect
Transistor has been proposed and verified by TCAD Simulation. The Electrostatic …

This paper deals with electrostatic behavior of triple-material gate-all-around hetero-junction
tunneling field-effect transistors (TMGAA-HJTFET) device. The model is advantageous in …

This paper aims to study the behavior of a Carbon Nanotube Field Effect Transistor
(CNTFET) which is one of the nanoelectronic devices and a major replacement for …

The issues of modeling the electrical characteristics of a silicon conical field-effect gate-all-
around (GAA) nanotransistor are discussed. An analytical model of the drain current of a …