Dynamical memristors for higher-complexity neuromorphic computing
Research on electronic devices and materials is currently driven by both the slowing down
of transistor scaling and the exponential growth of computing needs, which make present …
of transistor scaling and the exponential growth of computing needs, which make present …
Volatile and nonvolatile memristive devices for neuromorphic computing
Ion migration as well as electron transfer and coupling in resistive switching materials
endow memristors with a physically tunable conductance to resemble synapses, neurons …
endow memristors with a physically tunable conductance to resemble synapses, neurons …
Metrology for the next generation of semiconductor devices
NG Orji, M Badaroglu, BM Barnes, C Beitia… - Nature …, 2018 - nature.com
The semiconductor industry continues to produce ever smaller devices that are ever more
complex in shape and contain ever more types of materials. The ultimate sizes and …
complex in shape and contain ever more types of materials. The ultimate sizes and …
Linear conductance update improvement of CMOS-compatible second-order memristors for fast and energy-efficient training of a neural network using a memristor …
Memristors are two-terminal memory devices that can change the conductance state and
store analog values. Thanks to their simple structure, suitability for high-density integration …
store analog values. Thanks to their simple structure, suitability for high-density integration …
[HTML][HTML] Impact of vacancies and impurities on ferroelectricity in PVD-and ALD-grown HfO2 films
L Baumgarten, T Szyjka, T Mittmann… - Applied Physics …, 2021 - pubs.aip.org
We investigate the emerging chemical states of TiN/HfO 2/TiN capacitors and focus
especially on the identification of vacancies and impurities in the ferroelectric HfO 2 layers …
especially on the identification of vacancies and impurities in the ferroelectric HfO 2 layers …
Resistive switching kinetics and second-order effects in parylene-based memristors
AN Matsukatova, AV Emelyanov… - Applied Physics …, 2020 - pubs.aip.org
Parylene is a widely used polymer possessing advantages such as simple and cheap
production, possibility of fabrication on flexible substrates, transparency, and safety for the …
production, possibility of fabrication on flexible substrates, transparency, and safety for the …
Enhancing the synaptic properties of low-power and forming-free HfOx/TaOy/HfOx resistive switching devices
D Sakellaropoulos, P Bousoulas, G Nikas… - Microelectronic …, 2020 - Elsevier
The incorporation of a TaO y layer in a HfO x/TaO y/HfO x resistive switching memory stack
results in low-power (~ nW in pulsing mode) and forming-free operation. With this material …
results in low-power (~ nW in pulsing mode) and forming-free operation. With this material …
[HTML][HTML] Planar analog memimpedance behavior in reduced GO-Based Metal-Semiconductor-Metal
Tunable electronics are of great potential for intelligent, adaptable systems. Memristors and
memcapacitors have been extensively investigated recently as low power, high density, and …
memcapacitors have been extensively investigated recently as low power, high density, and …
Effect of Dielectric Thickness on Resistive Switching Polarity in TiN/Ti/HfO2/Pt Stacks
In recent years, several materials and metal-insulator-metal devices are being intensively
studied as prospective non-volatile memories due to their resistive switching effect. In this …
studied as prospective non-volatile memories due to their resistive switching effect. In this …
Li-doping effect on characteristics of ZnO thin films resistive random access memory
X Zhao, P Song, H Gai, Y Li, C Ai, D Wen - Micromachines, 2020 - mdpi.com
In this study, a Pt/Ag/LZO/Pt resistive random access memory (RRAM), doped by different Li-
doping concentrations was designed and fabricated by using a magnetron sputtering …
doping concentrations was designed and fabricated by using a magnetron sputtering …