Structure and Dielectric Property of High-k ZrO2 Films Grown by Atomic Layer Deposition Using Tetrakis(Dimethylamido)Zirconium and Ozone
J Liu, J Li, J Wu, J Sun - Nanoscale Research Letters, 2019 - Springer
Abstracts High-k metal oxide films are vital for the future development of microelectronics
technology. In this work, ZrO 2 films were grown on silicon by atomic layer deposition (ALD) …
technology. In this work, ZrO 2 films were grown on silicon by atomic layer deposition (ALD) …
Damage-free smooth-sidewall InGaAs nanopillar array by metal-assisted chemical etching
Producing densely packed high aspect ratio In0. 53Ga0. 47As nanostructures without
surface damage is critical for beyond Si-CMOS nanoelectronic and optoelectronic devices …
surface damage is critical for beyond Si-CMOS nanoelectronic and optoelectronic devices …
0.5 V Supply Voltage Operation of In0.65Ga0.35As/GaAs0.4Sb0.6 Tunnel FET
B Rajamohanan, R Pandey… - IEEE Electron …, 2014 - ieeexplore.ieee.org
In this letter, we demonstrate using fast current-voltage measurements, low switching slope
of 64 mV/decade over a drain current range between 10-3 and 2× 10-2 μA/μm in staggered …
of 64 mV/decade over a drain current range between 10-3 and 2× 10-2 μA/μm in staggered …
Ultrahigh-responsivity waveguide-coupled optical power monitor for Si photonic circuits operating at near-infrared wavelengths
T Ochiai, T Akazawa, Y Miyatake, K Sumita… - Nature …, 2022 - nature.com
A phototransistor is a promising candidate as an optical power monitor in Si photonic circuits
since the internal gain of photocurrent enables high responsivity. However, state-of-the-art …
since the internal gain of photocurrent enables high responsivity. However, state-of-the-art …
CMOS-Compatible Replacement Metal Gate InGaAs-OI FinFET With at V and nA/
We report CMOS-compatible n-channel InGaAson-insulator FinFETs obtained using a
replacement metal gate fabrication flow. The fabricated devices feature 12-nm-thick SiN x …
replacement metal gate fabrication flow. The fabricated devices feature 12-nm-thick SiN x …
Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
The effects of plasma enhanced atomic layer deposition (PEALD)-AlN interfacial passivation
layer (IPL) on the Al 2 O 3/In 0.53 Ga 0.47 As interfaces qualities are studied with different …
layer (IPL) on the Al 2 O 3/In 0.53 Ga 0.47 As interfaces qualities are studied with different …
Optimization of a Solution-Processed TiOx/(n)c-Si Electron-Selective Interface by Pre- and Postdeposition Treatments
Developing a vacuum-free and low-temperature deposition technique for dopant-free carrier-
selective materials without sacrificing their performance can reduce the fabrication cost and …
selective materials without sacrificing their performance can reduce the fabrication cost and …
[HTML][HTML] The effects of decomposition of CpZr (NMe2) 3 on atomic layer deposition for high-k ZrO2 thin films
In this study, the thermal stability of cyclopentadienyl tris (dimethylamino) zirconium (CpZr
(NMe 2) 3), a representative precursor for the deposition of ZrO 2 films, was evaluated after …
(NMe 2) 3), a representative precursor for the deposition of ZrO 2 films, was evaluated after …
Electrical hysteresis in p-GaN metal–oxide–semiconductor capacitor with atomic-layer-deposited Al2O3 as gate dielectric
The electrical hysteresis in current–voltage (I–V) and capacitance–voltage characteristics
was observed in an atomic-layer-deposited Al 2 O 3/p-GaN metal–oxide–semiconductor …
was observed in an atomic-layer-deposited Al 2 O 3/p-GaN metal–oxide–semiconductor …
A Simple Model of the Energy Harvester within a Linear and Hysteresis Approach
ME Semenov, PA Meleshenko, SV Borzunov… - Micromachines, 2023 - mdpi.com
In this article, a model of an energy harvester, the mechanical part of which is an inverted
pendulum, is proposed. We investigated the stability of a linearized system. It was proven …
pendulum, is proposed. We investigated the stability of a linearized system. It was proven …