Characterisation and optimization of next-generation silicon solar cell concepts rely on an
accurate knowledge of intrinsic charge carrier recombination in crystalline silicon. Reports of …

Accurate measurements of the bulk minority carrier lifetime in high‐quality silicon materials
is challenging due to the influence of surface recombination. Conventional surface …

The tunnel oxide passivated contact (TOPCon) structure got more consideration for
development of high performance solar cells by the introduction of a tunnel oxide layer …

Effective surface passivation is pivotal for achieving high performance in crystalline silicon (c-
Si) solar cells. However, many passivation techniques in solar cells involve high …

Understanding surface passivation arising from aluminium oxide (Al 2 O 3) films is of
significant relevance for silicon-based solar cells and devices that require negligible surface …

Carrier-selective contact schemes, like polysilicon on oxide (POLO), provide low contact
resistivities while preserving an excellent passivation quality. These junctions offer an …

In this study, it is observed that boron-doped float-zone silicon coated with hydrogenated
silicon nitride shows strong instabilities in effective minority carrier lifetime after a fast firing …

We have studied the mechanisms underpinning effective surface passivation of silicon with
hafnium oxide (HfO 2) thin films grown via atomic layer deposition (ALD). Plasma-enhanced …

Passivating contacts based on a thin SiOx layer and a doped Si layer (TOPCon) are an
appealing choice for pushing the efficiency of Si solar cells. One way to deposit the doped Si …

Quantification of Auger recombination in crystalline silicon is usually challenging because it
requires distinguishing Auger recombination from extrinsic recombination processes …