Comparative analysis of nanowire tunnel field effect transistor for biosensor applications

P Kumar, SK Sharma, BalwinderRaj - Silicon, 2021 - Springer
Nanowire based devices are most important candidate for future generation application. The
unique advantage of Nanowire as a channel material is one dimensional conduction, low …

Investigation of N+ SiGe juntionless vertical TFET with gate stack for gas sensing application

S Singh, A Sharma, V Kumar, P Umar, AK Rao… - Applied Physics A, 2021 - Springer
In this work, a novel N+ SiGe delta-doped gate stacked junctionless vertical tunnel field
transistor (N+ SiGe gate staked JL-VTFET) is proposed and investigated with its electrical …

Design and analysis of dual source vertical tunnel field effect transistor for high performance

S Badgujjar, G Wadhwa, S Singh, B Raj - Transactions on Electrical and …, 2020 - Springer
Abstract An optimally designed Dual Source Vertical Tunnel Field Effect Transistors is
proposed and investigated using technology computer aided design simulation. The vertical …

Analytical and compact modeling analysis of a SiGe hetero-material vertical L-shaped TFET

S Singh, B Raj - Silicon, 2022 - Springer
This paper deals with the development of a novel 2-D analytical modeling of heterojunction
vertical L-shaped tunnel FET for characterisation of surface potential and drain current. The …

Study of parametric variations on hetero-junction vertical t-shape TFET for suppressing ambipolar conduction

S Singh, DB Raj - Indian Journal of Pure & Applied Physics …, 2020 - op.niscpr.res.in
This paper investigates a hetero-junction vertical t-shape tunnel field effect transistor and
discussed various methods for the suppression of ambipolar conduction for the first-time …

Investigation of ON current and subthreshold swing of an InSb/Si heterojunction stacked oxide double-gate TFET with graphene nanoribbon

TSA Samuel, M Venkatesh, MK Pandian… - Journal of Electronic …, 2021 - Springer
This research intends to develop an analytical model for a heterojunction graphene
nanoribbon double-gate tunnel field-effect transistor with a stacked SiO 2/HfO 2 layer …

Detection of biomolecules using charge-plasma based gate underlap dielectric modulated dopingless TFET

SK Verma, S Singh, G Wadhwa, B Raj - Transactions on Electrical and …, 2020 - Springer
Abstract In this Paper, Dielectric Modulated Dopingless Double Gate Transistor (DM-
DLDGTFET) device is proposed for the free label detection of the charged and neutral …

Design and investigation of SiGe heterojunction based charge plasma vertical TFET for biosensing application

S Singh, AKS Chauhan, G Joshi, J Singh - Silicon, 2022 - Springer
This paper explores the Vertical tunnel FET with the introduced layer of SiGe within the
channel/source junction using TCAD. As Tunnel FETs smothered the 60 mV/decade …

Insights into the design principles of JF-ED-VTFET for biosensing application

S Singh, SK Agnihotri, VK Tewari, KK Bharti… - Physica …, 2024 - iopscience.iop.org
In this research article, we have designed a junction-free electrostatically doped vertical
tunnel field-effect transistor (JF-ED-VTEFT) for label-free biosensing applications. We …

Design and analysis of ferro electric-tunneling junction-VTFET for RF/analog and linear application

S Singh - Silicon, 2022 - Springer
In this paper a new ferro material embedded structure is introduced between the tunneling
junction to gain and improve ON/OFF current ratio with steeper subthreshold slope. Various …