III-nitride semiconductors are promising optoelectronic and electronic materials and have
been extensively investigated in the past decades. New functionalities, such as …

The escalating demand for artificial intelligence (AI), the internet of things (IoTs), and energy-
efficient high-volume data processing has brought the need for innovative solutions to the …

We report on the thickness scaling behavior of ferroelectric Sc 0.3 Al 0.7 N (ScAlN) films
grown on Mo substrates by molecular beam epitaxy. Switchable ferroelectricity is confirmed …

We report the demonstration of ferroelectric switching in yttrium (Y)-doped nitride
semiconductors. In this study, single-crystalline, wurtzite Y 0.07 Al 0.93 N films were …

Ferroelectrics have great potential in the field of nonvolatile memory due to programmable
polarization states by external electric field in nonvolatile manner. However, complementary …

Incorporating rare earth element scandium (Sc) into III-nitride wurtzite lattice offers
remarkable non-oxide ferroelectrics, tunable spontaneous polarization coefficients, and …

The rapid increase in CPU processing speeds has significantly advanced artificial
intelligence, yet it has also exacerbated the disparity in CPU utilization and data throughput …

The increasing use of machine learning, with its significant computational and
environmental costs, has motivated the exploration of unconventional computing substrates …

Multi‐level non‐volatile ferroelectric memories are emerging as promising candidates for
data storage and neuromorphic computing applications, due to the enhancement of storage …

The research found that after doping with rare earth elements, a large number of electrons
and holes will be produced on the surface of AlN, which makes the material have the …