Quantum dot lasers for silicon photonics
We review recent advances in the field of quantum dot lasers on silicon. A summary of
device performance, reliability, and comparison with similar quantum well lasers grown on …
device performance, reliability, and comparison with similar quantum well lasers grown on …
[HTML][HTML] Metamorphic InAs/InGaAs quantum dots for optoelectronic devices: A review
L Seravalli - Microelectronic Engineering, 2023 - Elsevier
InAs quantum dots grown on relaxed, metamorphic InGaAs buffers are an important
heterostructure for the realization of devices based on GaAs substrates. In these last 20 …
heterostructure for the realization of devices based on GaAs substrates. In these last 20 …
Metamorphic InAs (Sb)/InGaAs/InAlAs nanoheterostructures grown on GaAs for efficient mid-IR emitters
SV Ivanov, MY Chernov, VA Solov'Ev… - Progress in Crystal …, 2019 - Elsevier
High-efficiency semiconductor lasers and light-emitting diodes operating in the 3–5 μm mid-
infrared (mid-IR) spectral range are currently of great demand for a wide variety of …
infrared (mid-IR) spectral range are currently of great demand for a wide variety of …
Single quantum dot emission at telecom wavelengths from metamorphic InAs/InGaAs nanostructures grown on GaAs substrates
We report on the growth by molecular beam epitaxy and the study by atomic force
microscopy and photoluminescence of low density metamorphic InAs/InGaAs quantum dots …
microscopy and photoluminescence of low density metamorphic InAs/InGaAs quantum dots …
Metamorphic approach to single quantum dot emission at 1.55 μm on GaAs substrate
We report on the fabrication and the characterization of InAs quantum dots (QDs) embedded
in an indium rich In 0.42 Ga 0.58 As metamorphic matrix grown on a GaAs substrate. Growth …
in an indium rich In 0.42 Ga 0.58 As metamorphic matrix grown on a GaAs substrate. Growth …
Inas/ingaas quantum dots confined by inalas barriers for enhanced room temperature light emission: Photoelectric properties and deep levels
InAs/InGaAs heterostructures with quantum dots (QDs) have been studied for quite some
time for light-emitting diodes operating from the near to the far infrared range. However, the …
time for light-emitting diodes operating from the near to the far infrared range. However, the …
Structural properties of graded In x GaAs metamorphic buffer layers for quantum dots emitting in the telecom bands
B Scaparra, A Ajay, PS Avdienko, Y Xue… - Materials for …, 2023 - iopscience.iop.org
In recent years, there has been a significant increase in interest in tuning the emission
wavelength of InAs quantum dots (QDs) to wavelengths compatible with the already existing …
wavelength of InAs quantum dots (QDs) to wavelengths compatible with the already existing …
Metamorphic quantum dots: quite different nanostructures
In this work, we present a study of InAs quantum dots deposited on InGaAs metamorphic
buffers by molecular beam epitaxy. By comparing morphological, structural, and optical …
buffers by molecular beam epitaxy. By comparing morphological, structural, and optical …
Output power of a double tunneling-injection quantum dot laser
DS Han, LV Asryan - Nanotechnology, 2009 - iopscience.iop.org
We develop a comprehensive theoretical model for a double tunneling-injection (DTI)
quantum dot (QD) laser. Both electrons and holes are injected into QDs by tunneling from …
quantum dot (QD) laser. Both electrons and holes are injected into QDs by tunneling from …
Design and growth of metamorphic InAs/InGaAs quantum dots for single photon emission in the telecom window
III-V semiconductor quantum dots are strong candidates for single photon sources and are
fundamental cornerstones in the growing field of quantum cryptography and quantum …
fundamental cornerstones in the growing field of quantum cryptography and quantum …