Beyond cmos

S Das, A Chen, M Marinella - 2021 IEEE International …, 2021 - ieeexplore.ieee.org
Dimensional and functional scaling 1 1 Functional Scaling: Suppose that a system has been
realized to execute a specific function in a given, currently available, technology. We say that …

Cycle endurance and failure in ITO/MEH-PPV/Al resistive switching devices

MMF de Azevedo, GSM de Araújo, JA Osajima… - Sensors and Actuators A …, 2024 - Elsevier
Improving resistive memory reliability requires understanding some bottlenecks, ie, control
and stability of the memory parameters during endurance cycling and physical degradation …

[HTML][HTML] Electrical conduction of LiF interlayers in organic diodes

BF Bory, HL Gomes, RAJ Janssen… - Journal of Applied …, 2015 - pubs.aip.org
An interlayer of LiF in between a metal and an organic semiconductor is commonly used to
improve the electron injection. Here, we investigate the effect of moderate bias voltages on …

Non-volatile organic memory devices comprising SiO2 and C60 showing 104 switching cycles

P Siebeneicher, H Kleemann, K Leo… - Applied Physics …, 2012 - pubs.aip.org
We present a non-volatile organic memory device comprising a thin SiO 2 layer, the organic
semiconductor C 60, and an organic n-type doped layer between two metallic electrodes …

Low-frequency noise as a diagnostic tool for OLED reliability

PRF Rocha, LKJ Vandamme… - … on Noise and …, 2013 - ieeexplore.ieee.org
Organic light emitting diodes (OLED), either based on polymers or small molecules, suffer
from early failure: an unpredictable sudden increase in current with a total loss of light …

[HTML][HTML] Unipolar resistive switching in metal oxide/organic semiconductor non-volatile memories as a critical phenomenon

BF Bory, PRF Rocha, HL Gomes… - Journal of Applied …, 2015 - pubs.aip.org
Diodes incorporating a bilayer of an organic semiconductor and a wide bandgap metal
oxide can show unipolar, non-volatile memory behavior after electroforming. The prolonged …

The role of internal structure in the anomalous switching dynamics of metal-oxide/polymer resistive random access memories

PRF Rocha, A Kiazadeh, DM De Leeuw… - Journal of Applied …, 2013 - pubs.aip.org
The dynamic response of a non-volatile, bistable resistive memory fabricated in the form of
Al 2 O 3/polymer diodes has been probed in both the off-and on-state using triangular and …

Sudden death of organic light-emitting diodes

PRF Rocha, HL Gomes, K Asadi, I Katsouras, B Bory… - Organic …, 2015 - Elsevier
The degradation in light output of an Organic Light Emitting Diode (OLED) has been studied
extensively and has been explained by different mechanisms, such as formation of chemical …

Role of hole injection in electroforming of LiF-polymer memory diodes

BF Bory, HL Gomes, RAJ Janssen… - The Journal of …, 2012 - ACS Publications
Al/LiF/poly (spirofluorene)/Ba/Al diodes submitted to bias voltages near 15 V undergo a
change to a nonvolatile memory known as electroforming. Prior to electroforming, electron …

Effect of the oxidation of aluminum bottom electrode in a functionalized-carbon nanotube based organic rewritable memory device

IA Rosales-Gallegos, JA Avila-Niño, M Reyes-Reyes… - Thin Solid Films, 2016 - Elsevier
In this work, a bistable switching between ON and OFF states in current–voltage (IV)
measurements in the Al/AlO x/functionalized-multiwalled carbon nanotubes (f-MWCNTs) …