Graphene nanoribbons for quantum electronics

H Wang, HS Wang, C Ma, L Chen, C Jiang… - Nature Reviews …, 2021 - nature.com
Graphene nanoribbons (GNRs) are a family of one-dimensional (1D) materials with a
graphitic lattice structure. GNRs possess high mobility and current-carrying capability …

Materials science challenges to graphene nanoribbon electronics

V Saraswat, RM Jacobberger, MS Arnold - ACS nano, 2021 - ACS Publications
Graphene nanoribbons (GNRs) have recently emerged as promising candidates for channel
materials in future nanoelectronic devices due to their exceptional electronic, thermal, and …

Transport Properties of a MoS2/WSe2 Heterojunction Transistor and Its Potential for Application

A Nourbakhsh, A Zubair, MS Dresselhaus… - Nano …, 2016 - ACS Publications
This paper studies band-to-band tunneling in the transverse and lateral directions of van der
Waals MoS2/WSe2 heterojunctions. We observe room-temperature negative differential …

Low-voltage tunnel transistors for beyond CMOS logic

AC Seabaugh, Q Zhang - Proceedings of the IEEE, 2010 - ieeexplore.ieee.org
Steep subthreshold swing transistors based on interband tunneling are examined toward
extending the performance of electronics systems. In particular, this review introduces and …

Synthesis of graphene and its applications: a review

W Choi, I Lahiri, R Seelaboyina… - Critical reviews in solid …, 2010 - Taylor & Francis
Graphene, one-atom-thick planar sheet of carbon atoms densely packed in a honeycomb
crystal lattice, has grabbed appreciable attention due to its exceptional electronic and …

2D materials-based nanoscale tunneling field effect transistors: current developments and future prospects

S Kanungo, G Ahmad, P Sahatiya… - npj 2D Materials and …, 2022 - nature.com
The continuously intensifying demand for high-performance and miniaturized semiconductor
devices has pushed the aggressive downscaling of field-effect transistors (FETs) design …

[图书][B] Fundamentals of tunnel field-effect transistors

S Saurabh, MJ Kumar - 2016 - taylorfrancis.com
During the last decade, there has been a great deal of interest in TFETs. To the best authors'
knowledge, no book on TFETs currently exists. The proposed book provides readers with …

Device and architecture outlook for beyond CMOS switches

K Bernstein, RK Cavin, W Porod… - Proceedings of the …, 2010 - ieeexplore.ieee.org
Sooner or later, fundamental limitations destine complementary metal-oxide-semiconductor
(CMOS) scaling to a conclusion. A number of unique switches have been proposed as …

Tunneling transistors based on graphene and 2-D crystals

D Jena - Proceedings of the IEEE, 2013 - ieeexplore.ieee.org
As conventional transistors become smaller and thinner in the quest for higher performance,
a number of hurdles are encountered. The discovery of electronic-grade 2-D crystals has …

Graphene field-effect transistors

D Reddy, LF Register, GD Carpenter… - Journal of Physics D …, 2011 - iopscience.iop.org
Owing in part to scaling challenges for metal oxide semiconductor field-effect transistors
(MOSFETs) and complementary metal oxide semiconductor (CMOS) logic, the …