3,617,951 A 11/1971 Anderson 3,670,213 A 6/1972 Nakawaga et al. 3,766,370 A 10/1973
Walther 3,802,967 A 4/1974 Ladany et al. 3,914,137 A 10/1975 Huffman et al. 3,935,031 A …

BACKGROUND 0003 Group IV nanoparticles have proven useful in a variety of applications
for a wide selection of optoelectronic devices. However, due to problems associated with the …

Methods and apparatus for producing nanoparticles, including single-crystal semiconductor
nanoparticles, are provided. The methods include the step of generating a constricted …

(57) ABSTRACT A semiconductor structure for implementing optical beam sWitching
includes a monocrystalline silicon substrate and an amorphous oxide material overlying the …

High quality epitaxial layers of oxide can be grown overlying large silicon wafers by first
growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer …

References Cited() An integrated circuit for intermediate impedance matching US PATENT
DOCUMENTS and stabilization of high poWer devices is disclosed. High 3,670,213 A …

5,140,651 A 8/1992 Soref et al- A structure and method for forming a high dielectric con
5'O81'519 A 11/1992 Nishimura et a1 ' stant device structure includes a monocrystalline …

3,914,137 3,935,031 4,006,989 4,084,130 4,120,588 4,146.297 4,174,422 4,242,595
4,284,329 4,289.920 4,297,656 4,392.297 4,398,342 4,404.265 4,424,589 4,439,014 …

An optical Waveguide structure (10) is provided. The optical Waveguide structure (10) has a
monocrystalline substrate (12), an amorphous interface layer (14) overlying the …

US6885065B2 - Ferromagnetic semiconductor structure and method for forming the same -
Google Patents US6885065B2 - Ferromagnetic semiconductor structure and method for forming …