The Transition of Threshold Voltage Shift of AlO/SiN AlGaN/GaN MIS-HEMTs Under Negative Gate Bias Stress From DC to AC
YH Lee, KC Chang, MC Tai, YX Wang… - … on Electron Devices, 2024 - ieeexplore.ieee.org
In this study, the reliability issues are discussed under dc and ac negative gate bias stress
(ac-NGBS) in Al2O3/Si3N4 metal–insulator–semiconductor high electron mobility transistors …
(ac-NGBS) in Al2O3/Si3N4 metal–insulator–semiconductor high electron mobility transistors …
Comparative study on characteristics of GaN-based MIS-HEMTs with Al2O3 and Si3N4 gate insulators under Hot Carrier Degradation
PY Wu, XY Tsai, TC Chang, TM Tsai… - 2023 35th International …, 2023 - ieeexplore.ieee.org
In GaN-based metal-insulatorsemiconductor high electron mobility transistors (GaNbased
MIS HEMTs), Al2O3/Si3N4 bilayer-gate insulator-MIS HEMTs (Al2O3/Si3N4-MIS HEMTs) …
MIS HEMTs), Al2O3/Si3N4 bilayer-gate insulator-MIS HEMTs (Al2O3/Si3N4-MIS HEMTs) …
[图书][B] Technological Developments in Pursuit of Recess-Free Normally-Off Algan/Gan HEMTs
WC Cheng - 2021 - search.proquest.com
Thanks to GaN's high breakdown electric field, high electron mobility and saturation velocity,
GaN-based devices are considered promising candidates for power switching and RF …
GaN-based devices are considered promising candidates for power switching and RF …