Subthreshold Schottky-barrier thin-film transistors with ultralow power and high intrinsic gain
The quest for low power becomes highly compelling in newly emerging application areas
related to wearable devices in the Internet of Things. Here, we report on a Schottky-barrier …
related to wearable devices in the Internet of Things. Here, we report on a Schottky-barrier …
Record-high-performance hydrogenated In–Ga–Zn–O flexible Schottky diodes
Y Magari, SGM Aman, D Koretomo… - … Applied Materials & …, 2020 - ACS Publications
High-performance In–Ga–Zn–O (IGZO) Schottky diodes (SDs) were fabricated using
hydrogenated IGZO (IGZO: H) at a maximum process temperature of 150° C. IGZO: H was …
hydrogenated IGZO (IGZO: H) at a maximum process temperature of 150° C. IGZO: H was …
On the series resistance in staggered amorphous thin film transistors
A Cerdeira, M Estrada, LF Marsal, J Pallares… - Microelectronics …, 2016 - Elsevier
In this paper we review and assess the main methods reported to extract the parasitic
resistance in staggered amorphous TFTs. We present and discuss examples of their …
resistance in staggered amorphous TFTs. We present and discuss examples of their …
Fabrication and characterization of inverted organic PTB7: PC70BM solar cells using Hf-In-ZnO as electron transport layer
M Ramírez-Como, VS Balderrama, A Sacramento… - Solar Energy, 2019 - Elsevier
In this study, we report the use of Hafnium-Indium-Zinc-Oxide (HIZO) as electron transport
layer (ETL) in inverted organic solar cells (iOSCs) using a bulk heterojunction of Poly ({4, 8 …
layer (ETL) in inverted organic solar cells (iOSCs) using a bulk heterojunction of Poly ({4, 8 …
Study of contact resistance components in short-channel indium-gallium-zinc-oxide transistor
Contact resistance () is a major limitation to the scaling of amorphous indium-gallium-zinc-
oxide (a-IGZO) transistors, and it has not been thoroughly investigated on devices with sub …
oxide (a-IGZO) transistors, and it has not been thoroughly investigated on devices with sub …
Fully transparent high performance thin film transistors with bilayer ITO/Al-Sn-Zn-O channel structures fabricated on glass substrate
In this work, fully transparent high performance double-channel indium-tin-oxide/Al–Sn–Zn–
O thin-film transistors (ITO/ATZO TFTs) are successfully fabricated on glass by radio …
O thin-film transistors (ITO/ATZO TFTs) are successfully fabricated on glass by radio …
Direct evidence of barrier inhomogeneities at metal/AlGaN/GaN interfaces using nanoscopic electrical characterizations
The existence of barrier inhomogeneities at metal–semiconductor interfaces is believed to
be one of the reasons for the non-ideal behaviour of Schottky contacts. In general, barrier …
be one of the reasons for the non-ideal behaviour of Schottky contacts. In general, barrier …
Transition-metal-incorporated aluminum oxide thin films: toward electronic structure design in amorphous mixed-metal oxides
Amorphous metal oxides have numerous applications spanning from electronics to
catalysis. The ability to rationally design the electronic structure of such materials would thus …
catalysis. The ability to rationally design the electronic structure of such materials would thus …
Correlation between active layer thickness and ambient gas stability in IGZO thin-film transistors
Decreasing the active layer thickness has been recently reported as an alternative way to
achieve fully depleted oxide thin-film transistors for the realization of low-voltage operations …
achieve fully depleted oxide thin-film transistors for the realization of low-voltage operations …
Impact of the hafnium oxide as hole blocking layer on the performance of organic solar cells
M Ramírez-Como, A Sacramento… - 2020 IEEE Latin …, 2020 - ieeexplore.ieee.org
The effects of hafnium oxide (HfO2) as hole blocking layer (HBL) on the stability and
degradation under air environment of inverted bulk heterojunction organic solar cells …
degradation under air environment of inverted bulk heterojunction organic solar cells …