N-polar GaN: Epitaxy, properties, and device applications
Abstract In recent years, Gallium Nitride (GaN) has been established as a material of choice
for high power switching, high power RF and lighting applications. In c-direction, depending …
for high power switching, high power RF and lighting applications. In c-direction, depending …
Perspective: Toward efficient GaN-based red light emitting diodes using europium doping
While InGaN/GaN blue and green light-emitting diodes (LEDs) are commercially available,
the search for an efficient red LED based on GaN is ongoing. The realization of this LED is …
the search for an efficient red LED based on GaN is ongoing. The realization of this LED is …
Band Tailing and Deep Defect States in CH3NH3Pb(I1–xBrx)3 Perovskites As Revealed by Sub-Bandgap Photocurrent
Organometal halide perovskite semiconductors have emerged as promising candidates for
optoelectronic applications because of the outstanding charge carrier transport properties …
optoelectronic applications because of the outstanding charge carrier transport properties …
Circumventing the miscibility gap in InGaN nanowires emitting from blue to red
E Roche, Y Andre, G Avit, C Bougerol… - …, 2018 - iopscience.iop.org
Widegap III-nitride alloys have enabled new classes of optoelectronic devices including light
emitting diodes, lasers and solar cells, but it is admittedly challenging to extend their …
emitting diodes, lasers and solar cells, but it is admittedly challenging to extend their …
Defects, strain relaxation, and compositional grading in high indium content InGaN epilayers grown by molecular beam epitaxy
C Bazioti, E Papadomanolaki, T Kehagias… - Journal of Applied …, 2015 - pubs.aip.org
We investigate the structural properties of a series of high alloy content InGaN epilayers
grown by plasma-assisted molecular beam epitaxy, employing the deposition temperature …
grown by plasma-assisted molecular beam epitaxy, employing the deposition temperature …
[HTML][HTML] Demonstration of device-quality 60% relaxed In0. 2Ga0. 8N on porous GaN pseudo-substrates grown by PAMBE
Achieving high-quality, relaxed InGaN substrates for longer-wavelength light emitting diodes
(LEDs) is of great interest for the development of micro-LED based display technology. This …
(LEDs) is of great interest for the development of micro-LED based display technology. This …
Growth of three-dimensional InGaN nanostructures by plasma-assisted molecular beam epitaxy
VO Gridchin, KP Kotlyar, EV Ubyivovk… - ACS Applied Nano …, 2024 - ACS Publications
A study on the formation of InGaN ternary compounds in the three-dimensional growth mode
is presented. For the first time, we demonstrate that the self-organization during InGaN …
is presented. For the first time, we demonstrate that the self-organization during InGaN …
[HTML][HTML] Review of the Properties of GaN, InN, and Their Alloys Obtained in Cubic Phase on MgO Substrates by Plasma-Enhanced Molecular Beam Epitaxy
Gallium nitride (GaN) semiconductors and their broadband InGaN alloys in their hexagonal
phase have been extensively studied over the past 30 years and have allowed the …
phase have been extensively studied over the past 30 years and have allowed the …
III-Nitride double-heterojunction solar cells with high in-content InGaN absorbing layers: comparison of large-area and small-area devices
CAM Fabien, A Maros, CB Honsberg… - IEEE journal of …, 2015 - ieeexplore.ieee.org
This paper investigates the molecular beam epitaxy (MBE) growth, material characterization,
and performance testing of indium gallium nitride (InGaN)/GaN double-heterojunction solar …
and performance testing of indium gallium nitride (InGaN)/GaN double-heterojunction solar …
Demonstration of 82% relaxed In0. 18Ga0. 82N on porous GaN pseudo-substrate by plasma-assisted molecular beam epitaxy
In this study, the impact of InGaN film thickness and different compositionally graded
structures on InGaN relaxation grown on tiled GaN-on-porous-GaN pseudo substrates (PSs) …
structures on InGaN relaxation grown on tiled GaN-on-porous-GaN pseudo substrates (PSs) …