[PDF][PDF] Optimization of double-gate dual material GeOI-vertical TFET for VLSI circuit design
In this article, Double gate Dual material Germanium on insulator Vertical tunnel field effect
transistor (DGDM-GeOI VTFET) device is proposed for Ultra-low power and high …
transistor (DGDM-GeOI VTFET) device is proposed for Ultra-low power and high …
SOI FinFET based instrumentation amplifier for biomedical applications
R Sonkusare, O Joshi, SS Rathod - Microelectronics Journal, 2019 - Elsevier
In this paper, we present a design of SOI FinFET device based Instrumentation Amplifier (IN-
Amp) for biomedical applications. An IN-Amp is operated in weak inversion regime …
Amp) for biomedical applications. An IN-Amp is operated in weak inversion regime …
Analysis of subthreshold SOI FinFET based two stage OTA for low power
In this paper, subthreshold design and analysis of Silicon on Insulator Fin Field Effect
Transistor (SOI FinFET) based two stage Operational Transconductance Amplifier (OTA) is …
Transistor (SOI FinFET) based two stage Operational Transconductance Amplifier (OTA) is …
Design of TFET based Op-Amp and CCII for low voltage and low power applications
This paper presents design of an ultra-low-power two-stage Op-Amp and Second-
generation current conveyor (CCII) using gm/ID technique for portable applications like …
generation current conveyor (CCII) using gm/ID technique for portable applications like …
[PDF][PDF] IEEE VLSI Circuits and Systems Letter
Volume 6 – Issue 3 Aug 2020 Page 1 Volume 6 – Issue 3 Aug 2020 Editor-in-Chief: Anirban
Sengupta Page 2 IEEE VLSI Circuits and Systems Letter Volume 6, Issue 3, Aug 2020 Editorial …
Sengupta Page 2 IEEE VLSI Circuits and Systems Letter Volume 6, Issue 3, Aug 2020 Editorial …