The detection of harmful trace gases, such as formaldehyde (HCHO), is a technical
challenge in the current gas sensor field. The weak electrical signal caused by trace …

In recent years, multiferroic (MF) materials have attained remarkable attention because of
their exceptional ability to demonstrate both ferroelectric (FE) and magnetic properties …

In this study, a comparison of the negative capacitance vertical tunnel field-effect transistor
(NC-VTFET) and VTFET for biosensing applications was conducted. Dielectrically …

In this research article, we have designed a junction-free electrostatically doped vertical
tunnel field-effect transistor (JF-ED-VTEFT) for label-free biosensing applications. We …

In this paper a new ferro material embedded structure is introduced between the tunneling
junction to gain and improve ON/OFF current ratio with steeper subthreshold slope. Various …

In this work, a novel Gallium Arsenide Antimonide (GaAsSb)/Indium Gallium Arsenide
(InGaAs) hetero-junction double-dual gate-gate stack Vertical Tunnel FET (HJ-VTFET) …

In this work, a triple metal gate-ferroelectric material-with SiGe heterojunction based vertical
structure of Tunnel field effect transistor (TMG-FE-SiGe-VTFET) is proposed and …

This work discusses a junction-less nanowire tunnel field effect transistor (JLN-TFET) that
combines the advantages of a junction-less field effect transistor (JLFET) and a tunnel field …

In this work, a novel Ferroelectric gate oxide along with high-k dielectric HfO2 is introduced
in the Vertical TFET structure to incorporate the negative capacitance effect. The effects of …

This paper basically proposes and compares three different configurations of ferroelectric
oxide material on silicon body of vertical tunnel field-effect transistor. The charge plasma …