Solution-processed IGZO field-effect transistors with a three-step laser annealing process
In this paper, a three-step annealing process was employed to treat IGZO thin-film field-effect
transistors (TFTs). We observed that TFTs prepared by an initial high-temperature thermal …
transistors (TFTs). We observed that TFTs prepared by an initial high-temperature thermal …
Enhancement of visible light detection for indium–gallium–zinc oxide-based transparent phototransistor via application of porous-structured polytetrafluoroethylene
In this paper, a transparent phototransistor with improved visible light detection by applying
sub gap states engineering and a porous polytetrafluoroethylene (PTFE) layer on the indium …
sub gap states engineering and a porous polytetrafluoroethylene (PTFE) layer on the indium …
Bi-layered plasmonic photothermal nanocomposite heater for laser-irradiation based rapid digital annealing of metal and oxide films
YJ Kim, JJ Kim, YU Kim, MK Cho, SH Ko, J Shim… - Applied Surface …, 2024 - Elsevier
A photonic annealing technique implanting highly energetic photons provides the
characteristic advantage of triggering designated chemical/physical evolutions in materials …
characteristic advantage of triggering designated chemical/physical evolutions in materials …
Indium–Gallium–Zinc Oxide Thin-Film Transistor-Based Scan Driver Circuit Using Separate Driving Structure for Multiple Output Signals
SH Ahn, E Kim, EK Jung, S Hong… - IEEE Transactions on …, 2023 - ieeexplore.ieee.org
This article proposes a scan driver circuit based on indium–gallium–zinc oxide (IGZO) thin-
film transistors (TFTs) for multiple output signals. The proposed circuit could generate two …
film transistors (TFTs) for multiple output signals. The proposed circuit could generate two …