Deep traps in GaN-based structures as affecting the performance of GaN devices
AY Polyakov, IH Lee - Materials Science and Engineering: R: Reports, 2015 - Elsevier
New developments in theoretical studies of defects and impurities in III-Nitrides as pertinent
to compensation and recombination in these materials are discussed. New results on …
to compensation and recombination in these materials are discussed. New results on …
Buffer traps in Fe-doped AlGaN/GaN HEMTs: Investigation of the physical properties based on pulsed and transient measurements
M Meneghini, I Rossetto, D Bisi… - … on Electron Devices, 2014 - ieeexplore.ieee.org
This paper presents an extensive investigation of the properties of the trap with activation
energy equal to 0.6 eV, which has been demonstrated to be responsible for current collapse …
energy equal to 0.6 eV, which has been demonstrated to be responsible for current collapse …
Properties of C‐doped GaN
Carbon‐doping in the concentration range from [C]= 5× 1017 to 1.2× 1019 cm− 3 is
employed to achieve semi‐insulating properties of GaN layers as required for electronic …
employed to achieve semi‐insulating properties of GaN layers as required for electronic …
Magnetic Impurities in Wide Band‐gap III–V Semiconductors
A Wolos, M Kaminska - Semiconductors and Semimetals, 2008 - Elsevier
Publisher Summary This chapter discusses the magnetic impurities in wide band-gap III–V
semiconductors. The chapter describes the general properties of diluted magnetic …
semiconductors. The chapter describes the general properties of diluted magnetic …
Enhanced performance of a GaN piezoelectric nanogenerator with an embedded nanoporous layer via the suppressed carrier screening effect
JH Kang, DK Jeong, JS Ha, JK Lee… - … Science and Technology, 2017 - iopscience.iop.org
Highly efficient nanoporous GaN-based piezoelectric nanogenerators (PNGs) were
demonstrated using an electrochemical etching process. The output of the PNGs was …
demonstrated using an electrochemical etching process. The output of the PNGs was …
Performance-limiting traps in GaN-based HEMTs: From native defects to common impurities
I Rossetto, D Bisi, C de Santi, A Stocco… - Power GaN Devices …, 2017 - Springer
This chapter describes the properties of the performance-limiting defects in GaN-based
transistors. The first part of the chapter summarizes the properties of the most common …
transistors. The first part of the chapter summarizes the properties of the most common …
Effect of growth temperature of NH3-MBE grown GaN-on-Si layers on donor concentration and leakage currents
T Malin, I Osinnykh, V Mansurov, D Protasov… - Journal of Crystal …, 2024 - Elsevier
The effect of growth temperature on the buffer leakage currents of GaN-on-Si layers grown
by the NH 3-MBE technique within the technologically acceptable temperature range (750° …
by the NH 3-MBE technique within the technologically acceptable temperature range (750° …
[HTML][HTML] Comprehensive strain and band gap analysis of PA-MBE grown AlGaN/GaN heterostructures on sapphire with ultra thin buffer
In this work, cluster tool (CT) Plasma Assisted Molecular Beam Epitaxy (PA-MBE) grown
AlGaN/GaN heterostructure on c-plane (0 0 0 1) sapphire (Al 2 O 3) were investigated by …
AlGaN/GaN heterostructure on c-plane (0 0 0 1) sapphire (Al 2 O 3) were investigated by …
Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs
D Bisi, A Stocco, I Rossetto, M Meneghini… - Microelectronics …, 2015 - Elsevier
The effects of buffer compensation strategies on the electrical performance and RF reliability
of AlGaN/GaN HEMTs have been studied by means of static and dynamic I–V …
of AlGaN/GaN HEMTs have been studied by means of static and dynamic I–V …
AlGaN/GaN Schottky barrier diodes on silicon substrates with various Fe doping concentrations in the buffer layers
HC Chiu, SC Chen, JW Chiu, BH Li, HY Wang… - Microelectronics …, 2018 - Elsevier
Abstract This study demonstrated AlGaN/GaN Schottky barrier diodes (SBDs) for use in high-
frequency, high-power, and high-temperature electronics applications. Four structures with …
frequency, high-power, and high-temperature electronics applications. Four structures with …