Emerging radiative materials and prospective applications of radiative sky cooling-A review
The enhanced cooling performance and the reduced operational cost of the integrated
radiative sky coolers are essentially necessitated in a wide range of applications, such as …
radiative sky coolers are essentially necessitated in a wide range of applications, such as …
[HTML][HTML] A critical review of recent progress on negative capacitance field-effect transistors
The remarkable progress of electronics in the 20th century sometimes obscures the dramatic
story of repeated reinvention of the underlying device technology. The reinventions were …
story of repeated reinvention of the underlying device technology. The reinventions were …
Overview of PUF-based hardware security solutions for the Internet of Things
The Internet of Things (IoT) consists of numerous inter-connected resource-constrained
devices such as sensors nodes and actuators, which are linked to the Internet. By 2020 it is …
devices such as sensors nodes and actuators, which are linked to the Internet. By 2020 it is …
Recent issues in negative-bias temperature instability: Initial degradation, field dependence of interface trap generation, hole trapping effects, and relaxation
Recent advances in experimental techniques (on-the-fly and ultrafast techniques) allow
measurement of threshold voltage degradation due to negative-bias temperature instability …
measurement of threshold voltage degradation due to negative-bias temperature instability …
BTI analysis tool—Modeling of NBTI DC, AC stress and recovery time kinetics, nitrogen impact, and EOL estimation
A comprehensive modeling framework is presented to predict the time kinetics of negative
bias temperature instability stress and recovery during and after dc and ac stresses and also …
bias temperature instability stress and recovery during and after dc and ac stresses and also …
Compact modeling of MOSFET wearout mechanisms for circuit-reliability simulation
X Li, J Qin, JB Bernstein - IEEE Transactions on device and …, 2008 - ieeexplore.ieee.org
The integration density of state-of-the-art electronic systems is limited by the reliability of the
manufactured integrated circuits at a desired circuit density. Design rules, operating …
manufactured integrated circuits at a desired circuit density. Design rules, operating …
The universality of NBTI relaxation and its implications for modeling and characterization
T Grasser, W Gos, V Sverdlov… - 2007 IEEE International …, 2007 - ieeexplore.ieee.org
As of date many NBTI models have been published which aim to successfully capture the
essential physics. As such, these models have mostly focused on the stress phase. The …
essential physics. As such, these models have mostly focused on the stress phase. The …
A review of NBTI mechanisms and models
S Mahapatra, N Parihar - Microelectronics Reliability, 2018 - Elsevier
A comprehensive review is done of different NBTI mechanisms and models proposed in the
literature over the past years. The Reaction-Diffusion (RD) model based comprehensive …
literature over the past years. The Reaction-Diffusion (RD) model based comprehensive …
A device-to-system perspective regarding self-heating enhanced hot carrier degradation in modern field-effect transistors: A topical review
As foreseen by Keyes in the late 1960s, the self-heating effect has emerged as an important
concern for device performance, output power density, run-time variability, and reliability of …
concern for device performance, output power density, run-time variability, and reliability of …