Radiation effects in SiGe technology
JD Cressler - IEEE transactions on Nuclear Science, 2013 - ieeexplore.ieee.org
Silicon-Germanium (SiGe) technology effectively merges the desirable attributes of
conventional silicon-based CMOS manufacturing (high integration levels, at high yield and …
conventional silicon-based CMOS manufacturing (high integration levels, at high yield and …
BiCMOS-based compensation: Toward fully curvature-corrected bandgap reference circuits
We present a novel BiCMOS-based temperature compensation technique aiming at
complete correction of the curvature in the temperature response of bandgap references …
complete correction of the curvature in the temperature response of bandgap references …
Design of radiation-hardened RF low-noise amplifiers using inverse-mode SiGe HBTs
I Song, S Jung, NE Lourenco… - IEEE transactions on …, 2014 - ieeexplore.ieee.org
A SiGe RF low-noise amplifier (LNA) with built-in tolerance to single-event transients is
proposed. The LNA utilizes an inverse-mode SiGe HBT for the common-base transistor in a …
proposed. The LNA utilizes an inverse-mode SiGe HBT for the common-base transistor in a …
Single-event transient and total dose response of precision voltage reference circuits designed in a 90-nm SiGe BiCMOS technology
AS Cardoso, PS Chakraborty… - IEEE transactions on …, 2014 - ieeexplore.ieee.org
This paper presents an investigation of the impact of single-event transients (SETs) and total
ionization dose (TID) on precision voltage reference circuits designed in a fourth-generation …
ionization dose (TID) on precision voltage reference circuits designed in a fourth-generation …
ASET and TID characterization of a radiation hardened bandgap voltage reference in a 28-nm bulk CMOS technology
J Chen, Y Chi, B Liang, H Yuan, Y Wen… - … on Nuclear Science, 2022 - ieeexplore.ieee.org
Analog single-event transient (ASET) and total ionizing dose (TID) characterization of a
radiation-hardened bandgap voltage reference (BGR) is investigated in a 28-nm commercial …
radiation-hardened bandgap voltage reference (BGR) is investigated in a 28-nm commercial …
A single-event transient radiation hardened low-dropout regulator for LC voltage-controlled oscillator
X Chen, Q Guo, H Yuan, Y Guo - Symmetry, 2022 - mdpi.com
A voltage-controlled oscillator (VCO) is an essential part of the clock circuitry in satellite
communication systems. Low-dropout regulators (LDO) provide stable voltage supply to the …
communication systems. Low-dropout regulators (LDO) provide stable voltage supply to the …
Single event transients and pulse quenching effects in bandgap reference topologies for space applications
CM Andreou, A Javanainen, A Rominski… - … on Nuclear Science, 2016 - ieeexplore.ieee.org
An architectural performance comparison of bandgap voltage reference variants, designed
in a 0.18 μm CMOS process, is performed with respect to single event transients. These are …
in a 0.18 μm CMOS process, is performed with respect to single event transients. These are …
Single-event response of the SiGe HBT operating in inverse-mode
SD Phillips, KA Moen, NE Lourenco… - IEEE transactions on …, 2012 - ieeexplore.ieee.org
The single-event effect sensitivity of inverse-mode biased SiGe HBTs in both bulk and SOI
technology platforms are investigated, for the first time, using digital circuits and stand-alone …
technology platforms are investigated, for the first time, using digital circuits and stand-alone …
Comparative analysis of mechanical strain and silicon film thickness on charge collection mechanisms of nanometer scaled SOI devices under heavy ion and pulsed …
M Gaillardin, M Raine, O Duhamel… - … on Nuclear Science, 2014 - ieeexplore.ieee.org
We investigate the impact of performance boosters using mechanical stress on the Single-
Event Transient (SET) response of nanometer scaled Fully-Depleted Silicon-On-Insulator …
Event Transient (SET) response of nanometer scaled Fully-Depleted Silicon-On-Insulator …
Design of digital circuits using inverse-mode cascode SiGe HBTs for single event upset mitigation
TK Thrivikraman, E Wilcox, SD Phillips… - IEEE transactions on …, 2010 - ieeexplore.ieee.org
We report on the design and measured results of a new SiGe HBT radiation hardening by
design technique called the “inverse-mode cascode”(IMC). A third-generation SiGe HBT …
design technique called the “inverse-mode cascode”(IMC). A third-generation SiGe HBT …