All-metal electrodes vertical gate-all-around device with self-catalyzed selective grown InAs NWs array
T Li, W Yang, Y Han, X Ji, T Yang, Q Chen - Science China Information …, 2018 - Springer
With the scaling down of field-effect transistors (FETs) to improve their performance, 3D
vertical surrounding gate structure has drawn great attention. On the other hand, concerning …
vertical surrounding gate structure has drawn great attention. On the other hand, concerning …