Compared with conventional display technologies, liquid crystal display (LCD), and organic
light emitting diode (OLED), micro-LED displays possess potential advantages such as high …

Rapid advancement of wide-bandgap AlGaN semiconductor materials offers tremendous
opportunities in the field of ultraviolet (UV) optoelectronics for a wide range of advanced …

Integrated circuits (ICs) and optoelectronic chips are the foundation stones of the modern
information society. The IC industry has been driven by the so-called “Moore's law” in the …

Inorganic micro light-emitting diodes (micro-LEDs) based on III-V compound semiconductors
have been widely studied for self-emissive displays. From chips to applications, integration …

Abstract Blue LEDs and HEMTs based on III-Nitride have been flourishing commercially
across the globe, thanks largely to breakthroughs in the material quality of the wide …

Micro-LED display technology is considered to be the next generation of display technology,
which has the characteristics of high miniaturization, thin film and integration, as well as the …

A vertical integration of indium gallium nitride/gallium nitride (InGaN/GaN)-based microlight-
emitting diode (μLED) and GaN ultraviolet bipolar junction transistor (BJT) phototransistor …

We report for the first time on-chip integration of III-nitride voltage-controlled light emitters
with visible and ultraviolet (UV) photodiodes (PDs). InGaN/GaN and AlGaN/GaN …

This work demonstrates an all-GaN-based µLED display with monolithic integrated HEMT
and µLED pixels using the selective area regrowth method. The monochrome µLED-HEMT …

In this letter, we report a monolithically photonic integrated device based on the
configuration of an InGaN/GaN micro-light-emitting diode (LED) in series with an …