Reliability of CMOS-SOI power amplifiers for millimeter-wave 5G: the case for pMOS
P Asbeck, S Alluri, N Rostomyan… - 2022 IEEE …, 2022 - ieeexplore.ieee.org
Output power and efficiency of CMOS-SOI millimeter-wave power amplifiers strongly depend
on transistor reliability considerations. In comparison to nMOS, pMOS has potential reliability …
on transistor reliability considerations. In comparison to nMOS, pMOS has potential reliability …
Integrated Circuits for Wireless Communications: Research Activities at the University of California, San Diego: Circuits Research for Wireless Communications at the …
The continuing demand for improved wireless connectivity and enhanced data rates has
spurred worldwide research in microwave and millimeter (mm)-wave circuits and systems …
spurred worldwide research in microwave and millimeter (mm)-wave circuits and systems …
A 29-dBm, 34% PAE E-band dual-input Doherty power amplifier using 40-nm GaN technology
T Nakatani, MA Zolfaghari, JJ Yan… - 2022 IEEE BiCMOS …, 2022 - ieeexplore.ieee.org
A low E-band dual-input two-stage Doherty power amplifier is demonstrated using 40-nm T-
gate GaN technology. Power-dependent biasing is used to enhance efficiency, with zero …
gate GaN technology. Power-dependent biasing is used to enhance efficiency, with zero …
A Tapped Transmission Line Ring Power Amplifier for High Peak and Average Efficiency
SM Chang, JF Buckwalter - IEEE Transactions on Microwave …, 2024 - ieeexplore.ieee.org
We propose an alternative approach to load modulation based on switching between high-
power (HP) and low-power (LP) amplifiers that, respectively, offer high power-added …
power (HP) and low-power (LP) amplifiers that, respectively, offer high power-added …
46% Peak PAE 28 GHz High Linearity Stacked-FET Power Amplifier IC with a Novel Two-Step Adaptive Bias Circuit in 45-nm SOI CMOS
T Sugiura, T Yoshimasu - 2022 17th European Microwave …, 2022 - ieeexplore.ieee.org
This paper presents a 28 GHz high linearity power amplifier (PA) IC with a novel two-step
adaptively controlled bias circuit for 5th generation (5G) mobile terminal applications in a 45 …
adaptively controlled bias circuit for 5th generation (5G) mobile terminal applications in a 45 …
A compact 27 dBm triple-stack power amplifier for 13 GHz operation in CMOS-SOI
Power amplifiers at 13 GHz are attracting attention for possible use in 6G wireless systems,
and the comparison between different transistor technologies that could be applied is an …
and the comparison between different transistor technologies that could be applied is an …
A Ka band power amplifier with varactor-based analog predistortion in pMOS-SOI
S Alluri, N Rostomyan, V Leung… - 2022 IEEE Topical …, 2022 - ieeexplore.ieee.org
To maximize efficiency while meeting stringent EVM requirements for 5G systems, it is
desirable to predistort input signals to CMOS power amplifiers. Particularly near the …
desirable to predistort input signals to CMOS power amplifiers. Particularly near the …
Ka-Band Stacked-FET Power Amplifier IC with Adaptively Controlled Gate Capacitor and Two-Step Adaptive Bias Circuit in 45-nm SOI CMOS
T Sugiura, T Yoshimasu - IEICE Transactions on Electronics, 2023 - search.ieice.org
This paper presents a Ka-band high-efficiency power amplifier (PA) with a novel adaptively
controlled gate capacitor circuit and a two-step adaptive bias circuit for 5th generation (5G) …
controlled gate capacitor circuit and a two-step adaptive bias circuit for 5th generation (5G) …
A Ka-band Amplifier System with Large Gain and Wider Bandwidth for Onboard Telemetry Transmission
A Banerjee, S Chakrabarti - 2022 IEEE Microwaves, Antennas …, 2022 - ieeexplore.ieee.org
Here, we present the design and development of a Ka-band amplifier system using
cascaded topology. The Gallium Arsenide (GaAs) pseudomorphic High Electron Mobility …
cascaded topology. The Gallium Arsenide (GaAs) pseudomorphic High Electron Mobility …