Field emission characteristics from graphene on hexagonal boron nitride

T Yamada, T Masuzawa, T Ebisudani, K Okano… - Applied Physics …, 2014 - pubs.aip.org
An attempt has been made to utilize uniquely high electron mobility of graphene on
hexagonal boron nitride (h-BN) to electron emitter. The field emission property of …

Carrier compensation in (001) n-type diamond by phosphorus doping

H Kato, S Yamasaki, H Okushi - Diamond and related materials, 2007 - Elsevier
Phosphorus (P) doping of (001) diamond was investigated focusing on [CH4]/[H2] and
[PH3]/[CH4] gas flow ratio dependence during homoepitaxial growth. P concentration was …

Advances in thermionic energy conversion through single-crystal n-type diamond

FAM Koeck, RJ Nemanich - Frontiers in Mechanical Engineering, 2017 - frontiersin.org
Thermionic energy conversion, a process that allows direct transformation of thermal to
electrical energy, presents a means of efficient electrical power generation as the hot and …

Atomically flat diamond (111) surface formation by homoepitaxial lateral growth

N Tokuda, H Umezawa, SG Ri, M Ogura… - Diamond and related …, 2008 - Elsevier
A process of homoepitaxial growth of diamond (111) films by microwave plasma-enhanced
chemical vapor deposition has been investigated characterizing areas by ex-situ atomic …

Electron emission from conduction band of heavily phosphorus doped diamond negative electron affinity surface

T Yamada, T Masuzawa, H Mimura… - Journal of Physics D …, 2015 - iopscience.iop.org
Hydrogen (H)-terminated surfaces of diamond have attracted significant attention due to
their negative electron affinity (NEA), suggesting high-efficiency electron emitters. Combined …

Carrier transport mechanism of diamond p+–n junction at low temperature using Schottky–pn junction structure

A Karasawa, T Makino, A Traore, H Kato… - Japanese Journal of …, 2021 - iopscience.iop.org
We elucidate the carrier transport mechanism from the p+-layer (metallic-conduction) to the
n-layer (band-conduction) in a diamond p+–n junction, which is the basic structure of …

n-Type phosphorus-doped nanocrystalline diamond: electrochemical and in situ Raman spectroelectrochemical study

ZV Živcová, O Frank, S Drijkoningen, K Haenen… - RSC …, 2016 - pubs.rsc.org
Electrochemical and in situ Raman spectroelectrochemical characterization of n-type
phosphorus-doped nanocrystalline diamond (P-NCD) is carried out. The P-NCD films are …

First principles calculation of lithium-phosphorus co-doped diamond

QY Shao, GW Wang, J Zhang, KG Zhu - arXiv preprint arXiv:1303.5580, 2013 - arxiv.org
We calculate the density of states (DOS) and the Mulliken population of the diamond and the
co-doped diamonds with different concentrations of lithium (Li) and phosphorus (P) by the …

Electron field emission from undoped polycrystalline diamond particles synthesized by microwave-plasma chemical vapor deposition

K Nose, R Fujita, M Kamiko, Y Mitsuda - Journal of Vacuum Science & …, 2012 - pubs.aip.org
Electron emission from polycrystalline diamond particles (PDPs) was obtained at low electric
fields in the absence of intentional doping. The PDPs were synthesized on a silicon …

An improved planar-gate triode with CNTs field emitters by electrophoretic deposition

YA Zhang, CX Wu, JY Lin, ZX Lin, TL Guo - Applied Surface Science, 2011 - Elsevier
An improved planar-gate triode with carbon nanotubes (CNTs) field emitters has been
successfully fabricated by conventional photolithography, screen printing and …