Research on active thermal control: Actual status and future trends
J Kuprat, CH van der Broeck… - IEEE Journal of …, 2021 - ieeexplore.ieee.org
The trend toward integrating power electronic converters and pushing their device utilization
toward physical limits puts the spotlight on the junction temperature of the devices. The …
toward physical limits puts the spotlight on the junction temperature of the devices. The …
[HTML][HTML] Printed circuit board embedded power semiconductors: A technology review
T Huesgen - Power Electronic Devices and Components, 2022 - Elsevier
Embedding power semiconductor devices into printed circuit boards (PCB) provides several
benefits compared to conventional packaging technologies. Integrating the semiconductor …
benefits compared to conventional packaging technologies. Integrating the semiconductor …
Intelligent gate drivers for future power converters
This article gives insights into recent developments in the field of power semiconductor gate
drivers that exhibit intelligent features. Such features are active switching transient control …
drivers that exhibit intelligent features. Such features are active switching transient control …
Power converters coolant: past, present, future, and a path toward active thermal control in electrified ship power systems
Power converters have widespread applications in automotive, renewables, and power
systems. The demand for power modules with low power consumption and high efficiency …
systems. The demand for power modules with low power consumption and high efficiency …
Pcb technology comparison enabling a 900v sic mosfet half bridge design for automotive traction inverters
The design of automotive traction inverters for an 800\V dc-bus typically utilize 1.2kV silicon
carbide (SiC) metal oxide semiconductor field effect transistors (MOSFET). The 1.2kV power …
carbide (SiC) metal oxide semiconductor field effect transistors (MOSFET). The 1.2kV power …
Closed-loop dv/dt control of SiC MOSFETs yielding minimal losses and machine degradation
Inverters with fast-switching silicon-carbide (SiC) MOSFETs enable great power densities
and low losses. However, fast voltage transients increase the stress on components that are …
and low losses. However, fast voltage transients increase the stress on components that are …
[PDF][PDF] Exploiting the full potential of silicon carbide devices via optimized highly integrated power modules
A Stippich - 2021 - scholar.archive.org
Ich möchte mich herzlich bei meinem Doktorvater Prof. Rik W. De Doncker bedanken, der
mir die Möglichkeit zur Promotion gegeben hat und mich dabei fortlaufend unterstützt hat …
mir die Möglichkeit zur Promotion gegeben hat und mich dabei fortlaufend unterstützt hat …
Ultra-Fast Short-Circuit Detection for SiC-MOSFETs Using DC-Link Voltage Monitoring
Power modules with silicon carbide (SiC) metal-oxide semiconductor field-effect transistors
(MOSFETs) offer low losses through high switching speeds and optimized loop inductances …
(MOSFETs) offer low losses through high switching speeds and optimized loop inductances …
New Design Concepts for PCB-Integration Technology in Power Electronics reducing Circuit Parasitics to a Minimum
R Raßmann, J Schnack, K Gripp… - … Symposium on 3D …, 2023 - ieeexplore.ieee.org
With the introduction of fast switching wide-bandgap (WBG) power semiconductors, the
focus in the development of power modules has increasingly been shifted to reducing …
focus in the development of power modules has increasingly been shifted to reducing …
[图书][B] Analyse und Optimierung der parasitären Elemente in integrierten SiC-Traktionsumrichtern hoher Leistungsdichte
J Schnack - 2023 - books.google.com
Für einen erfolgreichen Einsatz von Wide-Bandgap mit einer hohen Flankensteilheit ist die
Beherrschung der parasitären Elemente von zentraler Bedeutung. Am Beispiel eines …
Beherrschung der parasitären Elemente von zentraler Bedeutung. Am Beispiel eines …