Monitoring, diagnosis, and power forecasting for photovoltaic fields: A review

S Daliento, A Chouder, P Guerriero… - International Journal …, 2017 - Wiley Online Library
A wide literature review of recent advance on monitoring, diagnosis, and power forecasting
for photovoltaic systems is presented in this paper. Research contributions are classified into …

A review of DC fast chargers with BESS for electric vehicles: Topology, battery, reliability oriented control and cooling perspectives

H Polat, F Hosseinabadi, MM Hasan, S Chakraborty… - Batteries, 2023 - mdpi.com
The global promotion of electric vehicles (EVs) through various incentives has led to a
significant increase in their sales. However, the prolonged charging duration remains a …

Real-time measurement of temperature sensitive electrical parameters in SiC power MOSFETs

A Griffo, J Wang, K Colombage… - IEEE Transactions on …, 2017 - ieeexplore.ieee.org
This paper examines a number of techniques for junction temperature estimation of silicon
carbide (SiC) MOSFET s devices based on the measurement of temperature sensitive …

IGBT junction temperature measurement via peak gate current

N Baker, S Munk-Nielsen, F Iannuzzo… - IEEE Transactions on …, 2015 - ieeexplore.ieee.org
An electrical method for junction temperature measurement of MOS-gated power
semiconductor devices is presented. The measurement method involves detecting the peak …

Online junction temperature monitoring using intelligent gate drive for SiC power devices

Z Zhang, J Dyer, X Wu, F Wang… - … on Power Electronics, 2018 - ieeexplore.ieee.org
Junction temperature is an important design/operation parameter, as well as, a significant
indicator of device's health condition for power electronics converters. Compared to its …

Online junction temperature estimation of SiC power MOSFETs through on-state voltage mapping

F Stella, G Pellegrino, E Armando… - IEEE Transactions on …, 2018 - ieeexplore.ieee.org
This paper deals with real-time estimation of the junction temperature of SiC power mosfets.
The junction temperature of a device with four-switch module is estimated in real-time by …

Condition monitoring: A decade of proposed techniques

Y Avenas, L Dupont, N Baker, H Zara… - IEEE Industrial …, 2015 - ieeexplore.ieee.org
Power conversion systems are dependent on the performance and reliability of static
converters. However, they are subject to frequent functional and environmental strains …

Gate-driver integrated junction temperature estimation of SiC MOSFET modules

S Mocevic, V Mitrovic, J Wang, R Burgos… - IEEE Journal of …, 2021 - ieeexplore.ieee.org
SiC MOSFET power modules are becoming global solutions in systems operating in harsh
environment, and due to large economic implications, achieving reliability of such systems is …

Two decades of condition monitoring methods for power devices

G Susinni, SA Rizzo, F Iannuzzo - Electronics, 2021 - mdpi.com
Condition monitoring (CM) of power semiconductor devices enhances converter reliability
and customer service. Many studies have investigated the semiconductor devices failure …

Evaluating different implementations of online junction temperature sensing for switching power semiconductors

H Niu, RD Lorenz - IEEE Transactions on Industry Applications, 2016 - ieeexplore.ieee.org
Switching power semiconductor online junction temperature T j sensing is essential for
device switching performance evaluation, device switching control, and device lifetime …