Spin‐orbit torque (SOT) opens an efficient and versatile avenue for the electrical
manipulation of magnetization in spintronic devices. The enhancement of SOT efficiency …

Direct and inverse spin Hall effects lie at the heart of novel applications that utilize spins of
electrons as information carriers, allowing the generation of spin currents and detecting …

The next-generation spintronic device demands the gated control of spin transport across
the semiconducting channel through the replacement of the external gate voltage source by …

Layered transition metal selenides have garnered increased attention in recent times as non-
noble metal bifunctional electrocatalysts for electrochemical water splitting. Tungsten …

Spin-orbit torque (SOT) provides an efficient approach to control the magnetic state and
dynamics in different classes of materials. Recent years, the crossover between two …

Enhancement of spin-orbit torque (SOT) efficiency in ferromagnet/heavy-metal bilayer is
promising for the realization of low-power spintronic devices. Here we show that inserting a …

In recent years, transition metal dichalcogenides (TMDs) have been extensively studied for
their efficient spin-orbit torque generation in TMD/ferromagnetic bilayers, owing to their large …

Abstract 2D transition metal dichalcogenides (TMDs) are excellent candidate materials to
study the effect of spin‐orbit torques (SOTs). Here, the effect of a WSe2 underlayer on the …

We demonstrate that spin-orbit coupling (SOC) strength for electrons near the conduction
band edge in few-layer γ-InSe films can be tuned over a wide range. This tunability is the …

The zero potential gradient in 2D III-VI chalcogenides NX (N= Ga, In; X= S, Se, Te)
monolayers hinders the Rashba spin splitting (RSS), which limits their application in …