Recent advances in doped Ge 2 Sb 2 Te 5 thin film based phase change memories
Nowadays, chalcogenide-based phase change materials (PCMs) are proving themselves
superior in the category of memory devices due to a combination of their unique set of …
superior in the category of memory devices due to a combination of their unique set of …
Advanced Metrics for Quantification of By‐Process Segregation beyond Ternary Systems
E Petroni, M Patelmo, A Serafini… - physica status solidi …, 2023 - Wiley Online Library
Ge‐rich GST (GGST) alloys have been shown to fulfill the tough temperature specifications
required by automotive applications. Thus, they are the most promising materials for the …
required by automotive applications. Thus, they are the most promising materials for the …
Alkali metal doping in B–C3N4 extends carrier lifetime and increases the CO2 adsorption: DFT study and time-domain Ab initio analysis
N Minhas, G Mustafa, K Kaur, N Kaur, G Singh… - Journal of Physics and …, 2022 - Elsevier
Abstract Carbon nitride (C 3 N 4) has been widely used in photocatalytic applications. Its
performance is unsatisfactory due to high band gap. In order to address these challenges …
performance is unsatisfactory due to high band gap. In order to address these challenges …
Ultra-high speed and low-power superlattice-like Sn18Sb82–SnSe2 thin films for phase change memory applications
R Liu, Z He, J Zhai, S Song, Z Song, X Zhou - Materials Letters, 2016 - Elsevier
Abstract Superlattice-like Sn 18 Sb 82–SnSe 2 multiple thin films are systematically
investigated for phase change memory application. The thin films have a preferable thermal …
investigated for phase change memory application. The thin films have a preferable thermal …
Designing a switchable high-optical-contrast material platform for visible reconfigurable nanophotonics
R Li, L Zhao, D Yang, C Bi, D Wang… - IEEE Electron …, 2024 - ieeexplore.ieee.org
The integration of phase change materials (PCMs) with planar multilayer structures,
metasurfaces, waveguides, and photonic integrated circuits has triggered a technological …
metasurfaces, waveguides, and photonic integrated circuits has triggered a technological …
Structural and spectroscopic ellipsometry studies on vacuum-evaporated Sn2m− 4Sb4S2m+ 2 (m= 2.5, 3 and 4) thin films deposited on glass and Si substrates
Abstract Sn 2m− 4 Sb 4 S 2m+ 2 (m= 2.5, 3 and 4) thin films were deposited on glass and Si
substrates using vacuum evaporation technique. The structural properties have been …
substrates using vacuum evaporation technique. The structural properties have been …
Phase transition behavior and electronic properties of GaSb/Ge2Sb2Te5 superlattice-like structure thin films
X Ta, L Chen - Applied Physics A, 2022 - Springer
Abstract We have fabricated GaSb/Ge2Sb2Te5 (GST) superlattice-like structure thin films for
phase change memory by magnetron sputtering method, and investigated their phase …
phase change memory by magnetron sputtering method, and investigated their phase …
Effect of gradual ordering of Ge/Sb atoms on chemical bonding: A proposed mechanism for the formation of crystalline Ge2Sb2Te5
J Singh, G Singh, A Kaura, SK Tripathi - Journal of Solid State Chemistry, 2018 - Elsevier
Using first principle calculations, we study the atomic arrangement and bonding mechanism
in the crystalline phase of Ge 2 Sb 2 Te 5 (GST). It is found that the stability of GST depends …
in the crystalline phase of Ge 2 Sb 2 Te 5 (GST). It is found that the stability of GST depends …
Dépôt de matériaux à changement de phase par PE-MOCVD à injection liquide pulsée pour des applications mémoires PCRAM
M Aoukar - 2015 - theses.hal.science
Les mémoires résistives PCRAM sont basées sur le passage rapide et réversible entre un
état amorphe hautement résistif et un état cristallin faiblement résistif d'un matériau à …
état amorphe hautement résistif et un état cristallin faiblement résistif d'un matériau à …
Electronic and Thermoelectric Properties of Layered Sn- and Pb-Doped Ge2Sb2Te5 Alloys Using First Principle Calculations
J Singh, G Singh, A Kaura, SK Tripathi - Journal of Electronic Materials, 2016 - Springer
A computational study on stable hexagonal phase of undoped, and Sn-and Pb-doped Ge 2
Sb 2 Te 5 (GST) phase change materials has been carried out. The electronic structure …
Sb 2 Te 5 (GST) phase change materials has been carried out. The electronic structure …