Perspective on radiation effects in nanoscale metal–oxide–semiconductor devices
DM Fleetwood - Applied Physics Letters, 2022 - pubs.aip.org
This article provides a brief overview and perspective on the radiation response of
nanoscale metal–oxide–semiconductor (MOS) devices. MOS total-ionizing-dose (TID) …
nanoscale metal–oxide–semiconductor (MOS) devices. MOS total-ionizing-dose (TID) …
Study of Single-Event Effects Influenced by Displacement Damage Effects under Proton Irradiation in Static Random-Access Memory
Y Liu, R Cao, J Tian, Y Cai, B Mei, L Zhao, S Cui, H Lv… - Electronics, 2023 - mdpi.com
Static random-access memory (SRAM), a pivotal component in integrated circuits, finds
extensive applications and remains a focal point in the global research on single-event …
extensive applications and remains a focal point in the global research on single-event …
Origin of post-irradiation Vth-shift variability in 3D-NAND memory array
MA Kumar, M Raquibuzzaman… - … on Nuclear Science, 2023 - ieeexplore.ieee.org
In this article, we report total-ionizing-dose (TID)-induced threshold-voltage () shift
characteristics of commercial-off-the-shelf (COTS) 64-layer 3-D NAND flash memory chips …
characteristics of commercial-off-the-shelf (COTS) 64-layer 3-D NAND flash memory chips …
Effects of Geometry and Cycling on the Radiation Response of Charge-Trapping NAND Memory Devices With SiON Tunneling Oxide
The effects of geometry and cycling are evaluated for charge-trapping NAND memory
devices with SiON tunneling layers. Processing splits include SiON tunneling layers with …
devices with SiON tunneling layers. Processing splits include SiON tunneling layers with …
Random Telegraph Noise and Radiation Response of 80 nm Vertical Charge-Trapping NAND Flash Memory Devices with SiON Tunneling Oxide
Random telegraph noise (RTN) measurements are performed on as-processed,
programmed, erased, and irradiated 80 nm vertical charge-trapping nand memory …
programmed, erased, and irradiated 80 nm vertical charge-trapping nand memory …
Single-Event Upset in 3-D Charge-Trap NAND Flash Memories
The effects of single-event upset (SEU) on the threshold voltage () of a programmed cell in 3-
D charge-trap (CT) NAND flash memory have been investigated using 3-D technology …
D charge-trap (CT) NAND flash memory have been investigated using 3-D technology …
TOTAL-IONIZING-DOSE EFFECTS ON CHARGE-TRAPPING NAND MEMORY DEVICES
J Cao - 2022 - ir.vanderbilt.edu
Total ionizing dose (TID) effects are important to consider for nonvolatile memories used in
high-radiation environments. Nowadays NAND Flash memory devices are based primarily …
high-radiation environments. Nowadays NAND Flash memory devices are based primarily …