Three-Dimensional Modeling of Minority-Carrier Lateral Diffusion Length Including Random Alloy Fluctuations in (,) and (,) Single Quantum Wells
For nitride-based (In, Ga) N and (Al, Ga) N quantum-well (QW) light-emitting diodes (LEDs),
the potential fluctuations caused by natural alloy disorders limit the lateral intra-QW carrier …
the potential fluctuations caused by natural alloy disorders limit the lateral intra-QW carrier …
Three dimensional simulation on the transport and quantum efficiency of UVC-LEDs with random alloy fluctuations
The active regions of ultraviolet light emitting diodes (UVLEDs) for UVB and ultra-violet band
C wavelengths are composed of AlGaN alloy quantum barriers (QBs) and quantum wells …
C wavelengths are composed of AlGaN alloy quantum barriers (QBs) and quantum wells …
Investigation of the Indium migration mechanism in the growth of InGaN quantum wells by MOCVD
Y Wang, F Liang, J Yang, Z Liu, D Zhao - Journal of Crystal Growth, 2023 - Elsevier
Improvement of InGaN quantum wells (QWs) with high In content is crucial for realizing well
GaN-based optoelectronic devices, such as laser diodes (LDs) and light-emitting diodes …
GaN-based optoelectronic devices, such as laser diodes (LDs) and light-emitting diodes …
Optimization of InGaN quantum well interfaces for fast interwell carrier transport and low nonradiative recombination
Efficient high-power operation of light emitting diodes based on InGaN quantum wells (QWs)
requires rapid interwell hole transport and low nonradiative recombination. The transport …
requires rapid interwell hole transport and low nonradiative recombination. The transport …
Impact of Alloy-Disorder-Induced Localization on Hole Diffusion in Highly Excited c-Plane and m-Plane (In, Ga) N Quantum Wells
For nitride-based InGaN and AlGaN quantum well (QW) LEDs, the potential fluctuations
caused by natural alloy disorders limit the lateral intra-QW carrier diffusion length and …
caused by natural alloy disorders limit the lateral intra-QW carrier diffusion length and …
Engineering of quantum barriers for efficient InGaN quantum well LEDs
Engineering of quantum barriers for efficient InGaN quantum well LEDs Page 1 Engineering of
quantum barriers for efficient InGaN quantum well LEDs Rinat Yapparov1*, Cheyenne Lynsky2 …
quantum barriers for efficient InGaN quantum well LEDs Rinat Yapparov1*, Cheyenne Lynsky2 …
High Performance Green LEDs for Solid State Lighting
S Nakamura, J Speck, L Kuritzky, S DenBaars… - 2020 - osti.gov
The development of white LEDs for solid state lighting (SSL) has been driven in recent years
by phosphor converted LEDs (pc-LEDs). However, losses (known as Stokes' losses) …
by phosphor converted LEDs (pc-LEDs). However, losses (known as Stokes' losses) …