Diamond has the most desirable thermal properties for applications in electronics. In
principle, diamond is the best candidate for integration with other materials for thermal …

In recent decades, interest in simulation modeling of plasma processing under atmospheric
pressure has been growing because of its appealing advantages across various domains …

A novel microwave plasma chemical vapor deposition (MPCVD) reactor with three-cylinder
cavity and outstanding tuning capability was proposed. The electric field and plasma in the …

To simulate the electric field distribution in a cylindrical resonant cavity during diamond
crystal growth by microwave plasma chemical vapor deposition (MPCVD), a three …

The heteroepitaxy of a single crystal diamond has been carried out in the KTaO 3 substrate
using Ir as a buffer layer. KTaO 3 has a perovskite lattice structure and displays a face …

Diamond is a very promising material with exceptional properties for many high value-added
applications especially due to the incorporation of impurities. As one of the most important …

Diamond is considered the ultimate semiconductor for its excellent physical and chemical
properties, while the defects formed during the growth significantly limit the performance of …

Iridium (Ir) has recently been shown to be a superior buffer layer material for diamond
heteroepitaxial growth on different substrates as it possesses chemical inertness and high …

This work reports both numerical and experimental studies of the reconditioning of a
microwave plasma jet chemical vapor deposition (MPJCVD) system for the growth of …

Homoepitaxial diamond growth may proceed with stops and resumptions to produce thick (a
few millimeters or even larger) crystals or structures with different layers (eg, doped and …