A majority-based imprecise multiplier for ultra-efficient approximate image multiplication
F Sabetzadeh, MH Moaiyeri… - IEEE Transactions on …, 2019 - ieeexplore.ieee.org
Approximate computing is an emerging approach for reducing the energy consumption and
design complexity in many applications where accuracy is not a crucial necessity. In this …
design complexity in many applications where accuracy is not a crucial necessity. In this …
Energy and area efficient imprecise compressors for approximate multiplication at nanoscale
Approximate computing is a new paradigm for designing energy-efficient integrated circuits
at the nanoscale. In this paper, we propose efficient imprecise 4: 2 and 5: 2 compressors by …
at the nanoscale. In this paper, we propose efficient imprecise 4: 2 and 5: 2 compressors by …
Design of high stability, low power and high speed 12 T SRAM cell in 32-nm CNTFET technology
E Mani, E Abbasian, M Gunasegeran… - … -International Journal of …, 2022 - Elsevier
Many researchers are trying to create a low power, high stability, and high-speed static
random access memory (SRAM) cell. This paper introduces an SRAM cell consisting of 12 …
random access memory (SRAM) cell. This paper introduces an SRAM cell consisting of 12 …
A single-bitline 9T SRAM for low-power near-threshold operation in FinFET technology
E Abbasian, M Gholipour, S Birla - Arabian Journal for Science and …, 2022 - Springer
Static random-access memories (SRAMs), which are the most ubiquitous in modern system-
on-chips, suffer from high power dissipation and poor stability in advanced complementary …
on-chips, suffer from high power dissipation and poor stability in advanced complementary …
Design of a Schmitt-trigger-based 7T SRAM cell for variation resilient low-energy consumption and reliable internet of things applications
E Abbasian, M Gholipour - AEU-International Journal of Electronics and …, 2021 - Elsevier
The internet of things (IoTs)-based systems require battery-enabled energy-efficient memory
circuits to operate at low voltage domain, especially below the transistor's threshold. This …
circuits to operate at low voltage domain, especially below the transistor's threshold. This …
A highly stable low-energy 10T SRAM for near-threshold operation
E Abbasian - IEEE Transactions on Circuits and Systems I …, 2022 - ieeexplore.ieee.org
This paper aims to explore the design of a novel highly stable low-energy 10T (SLE10T)
SRAM cell for near-threshold operation. The latch core of the proposed design consists of a …
SRAM cell for near-threshold operation. The latch core of the proposed design consists of a …
A schmitt-trigger-based low-voltage 11 T SRAM cell for low-leakage in 7-nm FinFET technology
E Abbasian, E Mani, M Gholipour… - Circuits, Systems, and …, 2022 - Springer
This paper proposes a modified Schmitt-trigger (ST)-based single-ended 11 T (MST11T)
SRAM cell. The proposed cell is best suited to ultra-low voltage applications. Two ST-based …
SRAM cell. The proposed cell is best suited to ultra-low voltage applications. Two ST-based …
Comprehensive analysis of 7T SRAM cell architectures with 18nm FinFET for low power bio-medical applications
TS Kumar, SL Tripathi - Silicon, 2022 - Springer
The SRAM cells are used in many biomedical applications such as Pace makers, ECG
devices, body area networks etc., where power consumption will be the main constraint. The …
devices, body area networks etc., where power consumption will be the main constraint. The …
A low-power dynamic ternary full adder using carbon nanotube field-effect transistors
Ternary logic uses fewer interconnects than binary logic, and smaller voltage swings are
required for the same information transfer. Carbon Nanotube transistors (CNFETs) have …
required for the same information transfer. Carbon Nanotube transistors (CNFETs) have …
A review on SRAM memory design using FinFET technology
TV Lakshmi, M Kamaraju - International Journal of System Dynamics …, 2021 - igi-global.com
An innovative technology named FinFET (Fin Field Effect Transistor) has been developed to
offer better transistor circuit design and to compensate the necessity of superior storage …
offer better transistor circuit design and to compensate the necessity of superior storage …