X-ray diffraction (XRD) techniques are powerful, non-destructive characterization tool with
minimal sample preparation. XRD provides the first information about the materials phases …

The high dielectric constant ZrO2, as one of the most promising gate dielectric materials for
next generation semiconductor device, is expected to be introduced as a new high k …

Intrinsic charge trap capacitive non-volatile flash memories take a significant share of the
semiconductor electronics market today. It is challenging to create intrinsic traps in the …

Solution processing of amorphous metal oxides has lately been used as an option to
implement in flexible electronics, allowing a reduction of the associated costs and high …

With the development of thin-film optoelectronic components and the increasing
requirements for improved integration and performance of ultra-large-scale integrated …

We report the tunability of the electronic band structure, especially the electron affinity, of an
all-inorganic precursor processed sol-gel aluminium oxide phosphate dielectric by the …

We demonstrate all inorganic, robust, cost-effective, spin-coated, two-terminal capacitive
memory metal-oxide nanoparticle-oxide-semiconductor devices with cadmium telluride …

The high-κ gate dielectrics, specifically amorphous films offer salient features such as
exceptional mechanical flexibility, smooth surfaces and better uniformity associated with low …

We studied solution-processed amorphous indium–zinc–tin oxide (a-IZTO) thin-film
transistors (TFTs) with spin-coated zirconium oxide (ZrO x) as the gate insulator. The ZrO x …

The photocatalyst S-scheme BiFeO3–g-C3N4 had been prepared by combining calcination
and hydrothermal reaction. 10% BiFeO3–g-C3N4 composite showed the greatest …