Hexagonal Si1–x Ge x with suitable alloy composition promises to become a new silicon
compatible direct bandgap family of semiconductors. Theoretical calculations, however …

Hexagonal crystal phase silicon-germanium (hex-SiGe) features efficient direct bandgap
emission between 1.5 and 3.4 µm. For expanding its application potential, the key challenge …

Direct bandgap group IV semiconductors, like strained Ge, GeSn, or hexagonal SiGe, are
considered promising for photonic integration on silicon. For group IV semiconductor lasers …

Recent advances in the characterization of hexagonal-diamond silicon (2H-Si) have shown
that this material possesses remarkably different structural, electronic and optical properties …

We present a comprehensive study on the formation of micrometer-sized, textured
hexagonal diamond silicon (hd-Si) crystals via nanoindentation followed by annealing …

For photon-spin conversion, the Ge hole system in a strained GeSi/Ge quantum well with a
diamond structure has attracted significant attention because of the potential for a high …

This review addresses the application of silicon-germanium (SiGe) semiconductors as
electronic components, highlighting their enhanced electronic and physical properties …