Emerging GaN technologies for power, RF, digital, and quantum computing applications: Recent advances and prospects
GaN technology is not only gaining traction in power and RF electronics but is also rapidly
expanding into other application areas including digital and quantum computing electronics …
expanding into other application areas including digital and quantum computing electronics …
[HTML][HTML] Development of GaN HEMTs fabricated on silicon, silicon-on-insulator, and engineered substrates and the heterogeneous integration
LH Hsu, YY Lai, PT Tu, C Langpoklakpam, YT Chang… - Micromachines, 2021 - mdpi.com
GaN HEMT has attracted a lot of attention in recent years owing to its wide applications from
the high-frequency power amplifier to the high voltage devices used in power electronic …
the high-frequency power amplifier to the high voltage devices used in power electronic …
Record RF power performance at 94 GHz from millimeter-wave N-polar GaN-on-sapphire deep-recess HEMTs
In this article, N-polar GaN-on-sapphire deep-recess metal–insulator–semiconductor (MIS)-
high-electron-mobility transistors (HEMTs) with a breakthrough performance at-band are …
high-electron-mobility transistors (HEMTs) with a breakthrough performance at-band are …
N-polar GaN: Epitaxy, properties, and device applications
Abstract In recent years, Gallium Nitride (GaN) has been established as a material of choice
for high power switching, high power RF and lighting applications. In c-direction, depending …
for high power switching, high power RF and lighting applications. In c-direction, depending …
N-polar GaN/AlGaN/AlN high electron mobility transistors on single-crystal bulk AlN substrates
Recent observation of high density polarization-induced two-dimensional electron gases in
ultra-thin N-polar GaN layers grown on single-crystal AlN has enabled the development of N …
ultra-thin N-polar GaN layers grown on single-crystal AlN has enabled the development of N …
W-Band Graded-Channel GaN HEMTs With Record 45% Power-Added-Efficiency at 94 GHz
We report the-band large-signal power and efficiency performance of Ga-polar graded-
channel (GC) AlGaN/GaN high-electron-mobility transistors (HEMTs) with a 50-nm gate …
channel (GC) AlGaN/GaN high-electron-mobility transistors (HEMTs) with a 50-nm gate …
First demonstration of four-finger N-polar GaN HEMT exhibiting record 712-mW output power with 31.7% PAE at 94 GHz
In this letter, the first four-finger (4) N-polar GaN high-electron-mobility transistor (HEMT) with
an outstanding large signal performance of 712-mW (7.1 W/mm) with 31.7% power-added …
an outstanding large signal performance of 712-mW (7.1 W/mm) with 31.7% power-added …
[HTML][HTML] III-N polarization-graded transistors for millimeter-wave applications—Understanding and future potential
DISCUSSION Polarization effects are central to nearly all heterostructure-based III-N device
concepts—but actively exploiting and engineering them, rather than accepting the …
concepts—but actively exploiting and engineering them, rather than accepting the …
[HTML][HTML] Low trapping effects and high electron confinement in short AlN/GaN-On-SiC HEMTs by means of a thin AlGaN back barrier
K Harrouche, S Venkatachalam, L Ben-Hammou… - Micromachines, 2023 - mdpi.com
In this paper, we report on an enhancement of mm-wave power performances with a
vertically scaled AlN/GaN heterostructure. An AlGaN back barrier is introduced underneath a …
vertically scaled AlN/GaN heterostructure. An AlGaN back barrier is introduced underneath a …
Impact of undoped channel thickness and carbon concentration on AlN/GaN-on-SiC HEMT performances
K Harrouche, S Venkatachalam… - Applied Physics …, 2022 - iopscience.iop.org
We report on a vertically scaled AlN/GaN high electron mobility transistor technology design
optimization for millimeter-wave applications. The undoped GaN channel thickness and …
optimization for millimeter-wave applications. The undoped GaN channel thickness and …