The aim of this manuscript is to provide a condensed overview of the contribution of certain
relatively new semiconductor substrates in the development of chemical and biochemical …

In the last few years, there has been remarkable progress in the development of group III-
nitride based materials because of their potential application in fabricating various …

Wide-band-gap GaN and Ga-rich InGaN alloys, with energy gaps covering the blue and
near-ultraviolet parts of the electromagnetic spectrum, are one group of the dominant …

An indium nitride (InN) gas sensor of 10 nm in thickness has achieved detection limit of 0.4
ppm acetone. The sensor has a size of 1 mm by 2.5 mm, while its sensing area is 0.25 mm …

Biosensing has found wide applications in biological and medical research, and in clinical
diagnosis, environmental monitoring and other analytical tasks. Recognized as novel and …

We have performed a detailed investigation of the molecular beam epitaxial growth and
characterization of InN nanowires spontaneously formed on Si (111) substrates under …

Light to hydrogen conversion via water splitting is of immense interest as a clean, storable,
and renewable energy source (Tachibana et al., 2012 [1]; Maeda and Domen, 2010 [2]; van …

According to a 2007 report entitled “Sensors: A Global Strategic Business Report,” the global
sensor market grew at an annual average rate of 4.5% between 2000 and 2008 and is …

We report an inelastic electron tunneling spectroscopy study on MgO magnetic junctions
with thin barriers (0.85–1.35 nm). Inelastic electron tunneling spectroscopy reveals resonant …

Ultrathin (∼ 10 nm) InN ion selective field effect transistors (ISFETs) have been
demonstrated to perform ion sensing in aqueous solutions with a sensitivity of 5 μ A/decade …