Study and analysis of advanced 3D multi-gate junctionless transistors
As the IC technology is evolving very rapidly, the feature size of the device has been
migrating to sub-nanometre regime for achieving the high packing density. To continue with …
migrating to sub-nanometre regime for achieving the high packing density. To continue with …
History and evolution of CMOS technology and its application in semiconductor industry
MH Bhuyan - 2017 - dspace.aiub.edu
For around five decades, the size of the transistors has been shrinking, and thus the number
of transistors in a single microelectronic chip has become possible to increase …
of transistors in a single microelectronic chip has become possible to increase …
18nm n-channel and p-channel Dopingless asymmetrical Junctionless DG-MOSFET: low power CMOS based digital and memory applications
N Mendiratta, SL Tripathi - Silicon, 2022 - Springer
In this paper, an 18nm dopingless asymmetrical junctionless (AJ) double gate (DG)
MOSFET has been designed for suppressed short channel effects (SCEs) for low power …
MOSFET has been designed for suppressed short channel effects (SCEs) for low power …
Dual- Independent-Gate FinFETs for Low Power Logic Circuits
M Rostami, K Mohanram - IEEE Transactions on Computer …, 2011 - ieeexplore.ieee.org
This paper describes the electrode work-function, oxide thickness, gate-source/drain
underlap, and silicon thick ness optimization required to realize dual-V th independent-gate …
underlap, and silicon thick ness optimization required to realize dual-V th independent-gate …
Surface potential modeling of graded-channel gate-stack (GCGS) high-K dielectric dual-material double-gate (DMDG) MOSFET and analog/RF performance study
V Narendar, KA Girdhardas - silicon, 2018 - Springer
In each complementary metal-oxide-semiconductor (CMOS) technology generation, design
of new device architectures at nanoscale regime becomes quite challenging task due to …
of new device architectures at nanoscale regime becomes quite challenging task due to …
Channel length scaling pattern for cylindrical surrounding double-gate (CSDG) MOSFET
MA Uchechukwu, VM Srivastava - IEEE access, 2020 - ieeexplore.ieee.org
The natural length of MOSFETs helps to describe the potential distribution in the Silicon
substrate. This natural length varies in different device structures, from a single gate to multi …
substrate. This natural length varies in different device structures, from a single gate to multi …
[HTML][HTML] A two-dimensional analytical model for short channel junctionless double-gate MOSFETs
A physics-based analytical model of electrostatic potential for short-channel junctionless
double-gate MOSFETs (JLDGMTs) operated in the subthreshold regime is proposed, in …
double-gate MOSFETs (JLDGMTs) operated in the subthreshold regime is proposed, in …
A two-dimensional model for the potential distribution and threshold voltage of short-channel double-gate metal-oxide-semiconductor field-effect transistors with a …
A two-dimensional (2D) model for the threshold voltage of the short-channel double-gate
(DG) metal-oxide-semiconductor field-effect transistors (MOSFETs) with a vertical Gaussian …
(DG) metal-oxide-semiconductor field-effect transistors (MOSFETs) with a vertical Gaussian …
An accurate model for threshold voltage analysis of dual material double gate metal oxide semiconductor field effect transistor
In this article, an accurate representation of threshold voltage for double metal double gate
(DMDG) device structure has been initiated. It is the lowest gate-source electromotive force …
(DMDG) device structure has been initiated. It is the lowest gate-source electromotive force …
Compact model of drain current in short-channel triple-gate FinFETs
N Fasarakis, A Tsormpatzoglou… - IEEE transactions on …, 2012 - ieeexplore.ieee.org
An analytical compact drain current model for undoped (or lightly doped) short-channel triple-
gate fin-shaped field-effect transistors (finFETs) is presented, taking into account quantum …
gate fin-shaped field-effect transistors (finFETs) is presented, taking into account quantum …