A method and apparatus of preventing lateral oxidation through gate dielectrics that are
highly permeable to oxygen diffusion, such as high-k gate dielectrics. According to one …

In a first embodiment of the present invention, a Semi conductor device having a novel
Spacer Structure and its method of fabrication is described. According to the first …

(57) ABSTRACT A method comprises forming a first semiconductor device in a Substrate,
where the first semiconductor device comprises a gate structure, a spacer disposed on …

Optimal strain in the channel region of a PMOS transistor is provided by silicon alloy material
in the junction regions of the device in a non-planar relationship with the surface of the …

A method of fabricating a semiconductor structure, in which after an etching process is
performed to form at least one recess within a semiconductor beside a gate structure, a …

2009, O124056 A1 5, 2009 Chen 2013/02998.94 A1* 11/2013 Sakuma et al...... 257,326
2009, O142931 A1 6, 2009 W. 2013/0306967 A1* 11/2013 Hoentschel et al. 257/48 tang …

BACKGROUND OF THE INVENTION 1. Field of the Invention The invention relates to metal-
oxide-Semiconductor field effect transistors (MOSFETs) and more particularly to transistor …

Methods and systems for permitting thickness control of the selective epitaxial growth (SEG)
layer in a semiconductor manufacturing process, for example raised source/drain …

(57) ABSTRACT A method to obtain thin (less than 300 nm) strain-relaxed SiGe buffer layers
on Si or silicon-on-insulator (SOI) Substrates. These buffer layerS have a homogeneous …

Increasing tensile or compressive stress in a semiconductor device Substrate can improve
drive current. For example, increasing the tensile stress in the Substrate can improve the …