Origin of post-irradiation V th-shift variability in 3D-NAND memory array

Cross-Temperature Reliability of 3D NAND: Cell-to-Cell Variability Analysis and Countermeasure

MA Kumar, B Ray - 2024 IEEE International Reliability Physics …, 2024 - ieeexplore.ieee.org
Cross-temperature effect is a significant reliability concern for 3D NAND Flash memory. In
this paper we explore the origin of cross-temperature reliability by measuring the cell …
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Exploring Cross-Temperature Reliability in 3D NAND Through Layer-Dependent Bit Error Analysis

MA Kumar, B Ray - … 8th International Test Conference India (ITC …, 2024 - ieeexplore.ieee.org
Exploring Cross-Temperature Reliability in 3D NAND Through Layer-Dependent Bit Error
Analysis Page 1 8th IEEE International Test Conference India (ITC India) 2024 979-8-3503-5259-7/24/$31.00 …
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