Emerging memristive artificial neuron and synapse devices for the neuromorphic electronics era
Growth of data eases the way to access the world but requires increasing amounts of energy
to store and process. Neuromorphic electronics has emerged in the last decade, inspired by …
to store and process. Neuromorphic electronics has emerged in the last decade, inspired by …
Controlling nucleation and crystallization in solution‐processed organic semiconductors for thin‐film transistors
Three orders of magnitude is the range over which the grain size (see figure) can be tuned
in solution‐processed organic semiconductor thin films for TFTs. Fluorinated triethylsilyl …
in solution‐processed organic semiconductor thin films for TFTs. Fluorinated triethylsilyl …
Hysteresis modulation on van der Waals‐based ferroelectric field‐effect transistor by interfacial passivation technique and its application in optic neural networks
Abstract 2D semiconductor‐based ferroelectric field effect transistors (FeFETs) have been
considered as a promising artificial synaptic device for implementation of neuromorphic …
considered as a promising artificial synaptic device for implementation of neuromorphic …
High aspect ratio contact hole etching using relatively transparent amorphous carbon hard mask deposited from propylene
CY Ho, XJ Lin, HR Chien, C Lien - Thin Solid Films, 2010 - Elsevier
In this study, a high aspect ratio contact pattern, beyond 70nm technology, in a very-large-
scale integrated circuit, was achieved using hydrogenated amorphous carbon (aC: H) film …
scale integrated circuit, was achieved using hydrogenated amorphous carbon (aC: H) film …
Compliance current dominates evolution of NiSi2 defect size in Ni/dielectric/Si RRAM devices
Resistive random access memory (RRAM) devices with a nickel top electrode form
controllable metal nanofilaments and have robust resistive switching performance. We …
controllable metal nanofilaments and have robust resistive switching performance. We …
Fabrication and characterization of a wind sensor for integration with a neuron circuit
P Argyrakis, A Hamilton, B Webb, Y Zhang… - Microelectronic …, 2007 - Elsevier
The first step towards realising a sensor that mimics a cricket is reported. An artificial system
consisting of a micro-electro-mechanical cantilever wind sensor and a neuron integrate and …
consisting of a micro-electro-mechanical cantilever wind sensor and a neuron integrate and …
Photoinitiated F2+H2/D2 chain‐reaction laser with high electrical efficiency
DB Nichols, RB Hall, JD McClure - Journal of Applied Physics, 1976 - pubs.aip.org
Performance characteristics are reported for a pulsed HF/DF laser initiated by
photodissociation of F2. Laser energy of 292 J is obtained from a 12.8‐l active volume for …
photodissociation of F2. Laser energy of 292 J is obtained from a 12.8‐l active volume for …
Improvement of cell transistors in high-k/metal-gate peripheral transistors technology for high-performance graphic memories
D Jang, J Lee, D Kim, DH Hwang, K Nho… - Japanese Journal of …, 2024 - iopscience.iop.org
We investigated characteristics and reliabilities of cell transistors (Cell Tr) in graphics double
data rate 7 (GDDR7) DRAM with high-k/metal gate (HKMG) peripheral transistors (Peri Tr) …
data rate 7 (GDDR7) DRAM with high-k/metal gate (HKMG) peripheral transistors (Peri Tr) …
Self-consistent nonlinear analysis of overmoded gyrotron oscillators
JL Vomvoridis - International Journal of Infrared and Millimeter Waves, 1982 - Springer
The self-consistent nonlinear analysis is presented for an overmoded gyrotron, in which the
gyrotropic beam interacts with more than one cavity eigenmodes. The nonlinear equations …
gyrotropic beam interacts with more than one cavity eigenmodes. The nonlinear equations …
Low leakage bulk silicon substrate based SDOI FINFETs
J Liu, Z Luo, H Yin, H Zhu, H Wang… - 2010 10th IEEE …, 2010 - ieeexplore.ieee.org
This work presents a novel low leakage bulk substrate based SDOI (Source-Drain on
Insulator) FINFET structure and a new integration scheme for fabrication thereof. Through …
Insulator) FINFET structure and a new integration scheme for fabrication thereof. Through …