Structure, energetics, and electronic states of III–V compound polytypes
F Bechstedt, A Belabbes - Journal of Physics: Condensed Matter, 2013 - iopscience.iop.org
Recently several hexagonal polytypes such as 2H, 4H, and 6H have been discovered for
conventional III–V semiconductor compounds in addition to the cubic 3C zinc-blende …
conventional III–V semiconductor compounds in addition to the cubic 3C zinc-blende …
Ab initio electronic transport model with explicit solution to the linearized Boltzmann transport equation
A Faghaninia, JW Ager III, CS Lo - Physical Review B, 2015 - APS
Accurate models of carrier transport are essential for describing the electronic properties of
semiconductor materials. To the best of our knowledge, the current models following the …
semiconductor materials. To the best of our knowledge, the current models following the …
Effect of charged dislocation scattering on electrical and electrothermal transport in -type InN
N Miller, EE Haller, G Koblmüller, C Gallinat… - Physical Review B …, 2011 - APS
Temperature-dependent thermopower and Hall-effect measurements, combined with model
calculations including all of the relevant elastic-and inelastic-scattering mechanisms, are …
calculations including all of the relevant elastic-and inelastic-scattering mechanisms, are …
Dielectric function and optical properties of Al-rich AlInN alloys pseudomorphically grown on GaN
E Sakalauskas, H Behmenburg, C Hums… - Journal of Physics D …, 2010 - iopscience.iop.org
A detailed discussion of the optical properties of Al-rich Al 1− x In x N alloy films is
presented. The (0 0 0 1)-oriented layers with In contents between x= 0.143 and x= 0.242 …
presented. The (0 0 0 1)-oriented layers with In contents between x= 0.143 and x= 0.242 …
Hole transport and photoluminescence in Mg-doped InN
Hole conductivity and photoluminescence (PL) were studied in Mg-doped InN films grown
by molecular beam epitaxy. Because surface electron accumulation interferes with carrier …
by molecular beam epitaxy. Because surface electron accumulation interferes with carrier …
Influence of exciton-phonon coupling and strain on the anisotropic optical response of wurtzite AlN around the band edge
The optical properties around the absorption edge of high-quality wurtzite c-plane AlN layers
are investigated by spectroscopic ellipsometry focusing on the anisotropy of the optical …
are investigated by spectroscopic ellipsometry focusing on the anisotropy of the optical …
Growth temperature effect on physical and mechanical properties of nitrogen rich InN epilayers
A set of N-polar InN epilayers has been grown at different temperatures by plasma–assisted
molecular beam epitaxy (PA-MBE) on GaN/AlN/Al 2 O 3 (0001) templates. The purpose is to …
molecular beam epitaxy (PA-MBE) on GaN/AlN/Al 2 O 3 (0001) templates. The purpose is to …
Dielectric function and bowing parameters of InGaN alloys
E Sakalauskas, Ö Tuna, A Kraus… - … status solidi (b), 2012 - Wiley Online Library
Abstract Ga‐rich (0001)‐oriented InxGa1− xN alloys grown by molecular beam epitaxy or
metal‐organic vapour phase epitaxy on GaN/sapphire templates were investigated by …
metal‐organic vapour phase epitaxy on GaN/sapphire templates were investigated by …
Structural and optical characterization of thin AlInN films on c-plane GaN substrates
The structure and optical characteristics of thin (∼ 30 nm) wurtzite AlInN films grown
pseudomorphic on free-standing, c-plane GaN substrates are presented. The Al 1− x In x N …
pseudomorphic on free-standing, c-plane GaN substrates are presented. The Al 1− x In x N …
Electronic properties of polar and nonpolar InN surfaces: A quasiparticle picture
Using density-functional-based total-energy calculations and the LDA-1/2 method to
compute approximately quasiparticle band structures, we have studied clean relaxed InN …
compute approximately quasiparticle band structures, we have studied clean relaxed InN …